NTBG020N120SC1 vs NVBG020N120SC1 feature comparison

NTBG020N120SC1 onsemi

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NVBG020N120SC1 onsemi

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Pbfree Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ONSEMI ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ 418BJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 49 Weeks 52 Weeks
Samacsys Manufacturer onsemi onsemi
Avalanche Energy Rating (Eas) 264 mJ 264 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V 1200 V
Drain Current-Max (ID) 98 A 98 A
Drain-source On Resistance-Max 0.028 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 24 pF 24 pF
JEDEC-95 Code TO-263CB TO-263CB
JESD-30 Code R-PSSO-G7 R-PSSO-G7
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 7 7
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 468 W 468 W
Pulsed Drain Current-Max (IDM) 392 A 392 A
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON CARBIDE SILICON
Turn-off Time-Max (toff) 94 ns 85 ns
Turn-on Time-Max (ton) 106 ns 67 ns
Base Number Matches 1 1
Date Of Intro 2020-06-24
Reference Standard AEC-Q101