NTD4810NH-1G vs NVD4806NT4G-VF01 feature comparison

NTD4810NH-1G Rochester Electronics LLC

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NVD4806NT4G-VF01 onsemi

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Pbfree Code No Yes
Rohs Code Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ONSEMI
Package Description IPAK, CASE 369AC, 3 PIN DPAK-3/2
Pin Count 3
Manufacturer Package Code CASE 369AC 369AA
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 66 mJ 220 mJ
Case Connection ISOLATED DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 10.8 A 11.3 A
Drain-source On Resistance-Max 0.0167 Ω 0.0094 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Cel) 265 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 150 A
Qualification Status COMMERCIAL
Surface Mount NO YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
ECCN Code EAR99
Factory Lead Time 4 Weeks
Date Of Intro 2017-05-03
Samacsys Manufacturer onsemi
Feedback Cap-Max (Crss) 251 pF
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 68 W
Reference Standard AEC-Q101
Transistor Application SWITCHING

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