NTD4810NH-1G
vs
NVD4806NT4G-VF01
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
End Of Life
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ONSEMI
|
Package Description |
IPAK, CASE 369AC, 3 PIN
|
DPAK-3/2
|
Pin Count |
3
|
|
Manufacturer Package Code |
CASE 369AC
|
369AA
|
Reach Compliance Code |
unknown
|
not_compliant
|
Avalanche Energy Rating (Eas) |
66 mJ
|
220 mJ
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
10.8 A
|
11.3 A
|
Drain-source On Resistance-Max |
0.0167 Ω
|
0.0094 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
265
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
120 A
|
150 A
|
Qualification Status |
COMMERCIAL
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
40
|
30
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
Factory Lead Time |
|
4 Weeks
|
Date Of Intro |
|
2017-05-03
|
Samacsys Manufacturer |
|
onsemi
|
Feedback Cap-Max (Crss) |
|
251 pF
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
68 W
|
Reference Standard |
|
AEC-Q101
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare NTD4810NH-1G with alternatives
Compare NVD4806NT4G-VF01 with alternatives