NVTFS5811NLWFTAG
vs
NVTFS5C466NLWFTAG
feature comparison
Pbfree Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
Part Package Code |
WDFN8 3.3x3.3, 0.65P
|
|
Pin Count |
8
|
|
Manufacturer Package Code |
511AB
|
515AQ
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
onsemi
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
Drain Current-Max (ID) |
40 A
|
14 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
21 W
|
38 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
Matte Tin (Sn) - annealed
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Base Number Matches |
1
|
1
|
Package Description |
|
WDFN-8
|
Factory Lead Time |
|
59 Weeks
|
Date Of Intro |
|
2017-01-26
|
Avalanche Energy Rating (Eas) |
|
72 mJ
|
Case Connection |
|
DRAIN
|
DS Breakdown Voltage-Min |
|
40 V
|
Drain-source On Resistance-Max |
|
0.012 Ω
|
JESD-30 Code |
|
S-PDSO-F5
|
Number of Terminals |
|
5
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Min |
|
-55 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
SQUARE
|
Package Style |
|
SMALL OUTLINE
|
Pulsed Drain Current-Max (IDM) |
|
214 A
|
Reference Standard |
|
AEC-Q101
|
Terminal Form |
|
FLAT
|
Terminal Position |
|
DUAL
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare NVTFS5811NLWFTAG with alternatives
Compare NVTFS5C466NLWFTAG with alternatives