P6SMBJ30A_R3_00001 vs SMBJ30R4G feature comparison

P6SMBJ30A_R3_00001 PanJit Semiconductor

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SMBJ30R4G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer PANJIT
Breakdown Voltage-Max 36.8 V 40.7 V
Breakdown Voltage-Min 33.3 V 33.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 30 V 30 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 1 1
Additional Feature EXCELLENT CLAMPING CAPABILITY
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max 3 W
Terminal Finish MATTE TIN

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Compare SMBJ30R4G with alternatives