P6SMBJ51CA_R2_00001 vs P4SMA51AHE3_A/I feature comparison

P6SMBJ51CA_R2_00001 PanJit Semiconductor

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P4SMA51AHE3_A/I Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-C2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 65.2 V 53.6 V
Breakdown Voltage-Min 56.7 V 48.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 600 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 51 V 43.6 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN Matte Tin (Sn)
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Factory Lead Time 8 Weeks
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Nom 51 V
Clamping Voltage-Max 70.1 V
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 3.3 W
Time@Peak Reflow Temperature-Max (s) 30

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