PHN210T vs PHN210 feature comparison

PHN210T NXP Semiconductors

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PHN210 NXP Semiconductors

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Part Package Code SOIC SOIC
Package Description PLASTIC, SOP-8 PLASTIC, SO-8
Pin Count 8 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 13 mJ 13 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 3.4 A 3.4 A
Drain-source On Resistance-Max 0.1 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e4 e4
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1.3 W 2 W
Pulsed Drain Current-Max (IDM) 14 A 14 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au) NICKEL PALLADIUM GOLD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 10
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 4 W
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 40 ns

Compare PHN210T with alternatives

Compare PHN210 with alternatives