SIHP8N50D-GE3
vs
IRF840BPBF
feature comparison
| Part Life Cycle Code |
End Of Life
|
End Of Life
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Avalanche Energy Rating (Eas) |
29 mJ
|
56 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
500 V
|
| Drain Current-Max (ID) |
8.7 A
|
8.7 A
|
| Drain-source On Resistance-Max |
0.85 Ω
|
0.85 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
156 W
|
156 W
|
| Pulsed Drain Current-Max (IDM) |
18 A
|
18 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
16 Weeks, 4 Days
|
| Feedback Cap-Max (Crss) |
|
8 pF
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
MATTE TIN OVER NICKEL
|
| Turn-off Time-Max (toff) |
|
56 ns
|
| Turn-on Time-Max (ton) |
|
58 ns
|
|
|
|
Compare SIHP8N50D-GE3 with alternatives
Compare IRF840BPBF with alternatives