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Part Details for SIHP8N50D-GE3 by Vishay Siliconix
Overview of SIHP8N50D-GE3 by Vishay Siliconix
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP8N50D-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHP8N50D-GE3-ND
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DigiKey | MOSFET N-CH 500V 8.7A TO220AB Min Qty: 1 Lead time: 20 Weeks Container: Tube |
60 In Stock |
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$0.5072 / $1.3500 | Buy Now |
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Bristol Electronics | 950 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 50 |
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$0.9750 / $1.5000 | Buy Now |
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Quest Components | 40 |
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$1.0000 / $2.0000 | Buy Now | |
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Quest Components | 760 |
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$0.8112 / $2.0280 | Buy Now |
Part Details for SIHP8N50D-GE3
SIHP8N50D-GE3 CAD Models
SIHP8N50D-GE3 Part Data Attributes:
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SIHP8N50D-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHP8N50D-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 29 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8.7 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHP8N50D-GE3
This table gives cross-reference parts and alternative options found for SIHP8N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP8N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SFF440C | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254C, 3 PIN | Solid State Devices Inc (SSDI) | SIHP8N50D-GE3 vs SFF440C |
| UF840L-TQ2-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | SIHP8N50D-GE3 vs UF840L-TQ2-T |
| FMP08N50E | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | SIHP8N50D-GE3 vs FMP08N50E |
| PJU8NA50_T0_00001 | Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | PanJit Semiconductor | SIHP8N50D-GE3 vs PJU8NA50_T0_00001 |
| IRF840J69Z | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | SIHP8N50D-GE3 vs IRF840J69Z |
| UF840L-TA3-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | SIHP8N50D-GE3 vs UF840L-TA3-T |
| IRF840BPBF | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies | SIHP8N50D-GE3 vs IRF840BPBF |
| UF840-TQ2-R | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Unisonic Technologies Co Ltd | SIHP8N50D-GE3 vs UF840-TQ2-R |
| STB9NK50Z | 7.2A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | SIHP8N50D-GE3 vs STB9NK50Z |
| UF840-TA3-T | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Unisonic Technologies Co Ltd | SIHP8N50D-GE3 vs UF840-TA3-T |