SIHP8N50D-GE3 vs PJU8NA50_T0_00001 feature comparison

SIHP8N50D-GE3 Vishay Siliconix

Buy Now Datasheet

PJU8NA50_T0_00001 PanJit Semiconductor

Buy Now Datasheet
Part Life Cycle Code End Of Life Not Recommended
Ihs Manufacturer VISHAY SILICONIX PAN JIT INTERNATIONAL INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay PANJIT
Avalanche Energy Rating (Eas) 29 mJ 512 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 8.7 A 8 A
Drain-source On Resistance-Max 0.85 Ω 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-251AA
JESD-30 Code R-PSFM-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 18 A 32 A
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare SIHP8N50D-GE3 with alternatives

Compare PJU8NA50_T0_00001 with alternatives