SQ2348CES-T1_GE3
vs
SQ2348ES-T1-GE3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
VISHAY INTERTECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
Vishay
|
| Base Number Matches |
1
|
2
|
| Package Description |
|
HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
|
| Avalanche Energy Rating (Eas) |
|
12 mJ
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain Current-Max (ID) |
|
8 A
|
| Drain-source On Resistance-Max |
|
0.024 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
50 pF
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
|
32 A
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
41 ns
|
| Turn-on Time-Max (ton) |
|
19 ns
|
|
|
|
Compare SQ2348CES-T1_GE3 with alternatives
Compare SQ2348ES-T1-GE3 with alternatives