TD62003P vs DS2003TMT feature comparison

TD62003P Toshiba America Electronic Components

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DS2003TMT National Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP NATIONAL SEMICONDUCTOR CORP
Part Package Code DIP
Package Description IN-LINE, R-PDIP-T16 SMALL OUTLINE, R-PDSO-G16
Pin Count 16
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.5 A 0.5 A
Collector-Emitter Voltage-Max 35 V 55 V
Configuration COMPLEX COMPLEX
DC Current Gain-Min (hFE) 1000
JESD-30 Code R-PDIP-T16 R-PDSO-G16
JESD-609 Code e0 e0
Number of Elements 7 7
Number of Terminals 16 16
Operating Temperature-Max 75 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn85Pb15)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 1.6 V
Base Number Matches 2 2
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

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