TK1R5R04PB vs IPB160N04S3-H2 feature comparison

TK1R5R04PB Toshiba America Electronic Components

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IPB160N04S3-H2 Infineon Technologies AG

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Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer TOSHIBA CORP INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 32 Weeks
Date Of Intro 2016-04-14
Avalanche Energy Rating (Eas) 377 mJ 898 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 160 A 160 A
Drain-source On Resistance-Max 0.00205 Ω 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 490 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G6
Number of Elements 1 1
Number of Terminals 2 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 205 W 214 W
Pulsed Drain Current-Max (IDM) 480 A 640 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-263
Pin Count 3
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE
JEDEC-95 Code TO-263
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare TK1R5R04PB with alternatives

Compare IPB160N04S3-H2 with alternatives