Part Details for TK1R5R04PB by Toshiba America Electronic Components
Overview of TK1R5R04PB by Toshiba America Electronic Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Price & Stock for TK1R5R04PB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK1R5R04PB,LXGQ
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Avnet Americas | Transistor MOSFET N-CH 40V 160A 3-Pin D2PAK - Tape and Reel (Alt: TK1R5R04PB,LXGQ) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
TK1R5R04PB,LXGQ
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Avnet Americas | Transistor MOSFET N-CH 40V 160A 3-Pin D2PAK - Tape and Reel (Alt: TK1R5R04PB,LXGQ) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
TK1R5R04PB,L1MAQ(O
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Avnet Asia | Transistor MOSFET N-CH 40V 160A 3-Pin D2PAK (Alt: TK1R5R04PB,L1MAQ(O) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
Part Details for TK1R5R04PB
TK1R5R04PB CAD Models
TK1R5R04PB Part Data Attributes:
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TK1R5R04PB
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK1R5R04PB
Toshiba America Electronic Components
Power Field-Effect Transistor
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Date Of Intro | 2016-04-14 | |
| Avalanche Energy Rating (Eas) | 377 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.00205 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 490 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 205 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK1R5R04PB
This table gives cross-reference parts and alternative options found for TK1R5R04PB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK1R5R04PB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB160N04S4-02D | Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | TK1R5R04PB vs IPB160N04S4-02D |
| IPB160N04S3-H2 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | TK1R5R04PB vs IPB160N04S3-H2 |
| TK150F04K3 | TRANSISTOR 150 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10W1A, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | TK1R5R04PB vs TK150F04K3 |
| NP160N04TUJ-E2-AY | Power MOSFETs for Automotive, MP-25ZT, /Embossed Tape | Renesas Electronics Corporation | TK1R5R04PB vs NP160N04TUJ-E2-AY |
| IPB160N04S402DXTMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | TK1R5R04PB vs IPB160N04S402DXTMA1 |
| IPB160N04S3H2ATMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | TK1R5R04PB vs IPB160N04S3H2ATMA1 |