Part Details for BAV20WSR9G by Taiwan Semiconductor
Overview of BAV20WSR9G by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Electronic Manufacturing
Part Details for BAV20WSR9G
BAV20WSR9G CAD Models
BAV20WSR9G Part Data Attributes
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BAV20WSR9G
Taiwan Semiconductor
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Datasheet
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BAV20WSR9G
Taiwan Semiconductor
Rectifier Diode,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.70 | |
Additional Feature | LOW POWER LOSS | |
Application | EFFICIENCY | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.25 V | |
JESD-30 Code | R-PDSO-F2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 0.5 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 0.2 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Power Dissipation-Max | 0.2 W | |
Rep Pk Reverse Voltage-Max | 200 V | |
Reverse Current-Max | 0.1 µA | |
Reverse Recovery Time-Max | 0.05 µs | |
Reverse Test Voltage | 150 V | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for BAV20WSR9G
This table gives cross-reference parts and alternative options found for BAV20WSR9G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BAV20WSR9G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BAS20-HE3-08 | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | BAV20WSR9G vs BAS20-HE3-08 |
BAS20,235 | BAS20 - High-voltage switching diode@en-us TO-236 3-Pin | Nexperia | BAV20WSR9G vs BAS20,235 |
BAS20T/R | Rectifier Diode | Nexperia | BAV20WSR9G vs BAS20T/R |
BAS20-HE3-18 | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | BAV20WSR9G vs BAS20-HE3-18 |
BAS20_R1_00001 | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, | PanJit Semiconductor | BAV20WSR9G vs BAS20_R1_00001 |
BAS20 | Rectifier Diode, 1 Element, 0.2A, Silicon | YAGEO Corporation | BAV20WSR9G vs BAS20 |
BAS20,215 | BAS20 - High-voltage switching diode TO-236 3-Pin | NXP Semiconductors | BAV20WSR9G vs BAS20,215 |
BAS20_R2_00001 | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, | PanJit Semiconductor | BAV20WSR9G vs BAS20_R2_00001 |
BAV20WS | Rectifier Diode, | Galaxy Semi-Conductor Co Ltd | BAV20WSR9G vs BAV20WS |
BAS20-7-F | Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Diodes Incorporated | BAV20WSR9G vs BAS20-7-F |