Part Details for BSC889N03LSGE8178 by Infineon Technologies AG
Overview of BSC889N03LSGE8178 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSC889N03LSGE8178
BSC889N03LSGE8178 CAD Models
BSC889N03LSGE8178 Part Data Attributes:
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BSC889N03LSGE8178
Infineon Technologies AG
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Datasheet
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BSC889N03LSGE8178
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 10 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 180 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC889N03LSGE8178
This table gives cross-reference parts and alternative options found for BSC889N03LSGE8178. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC889N03LSGE8178, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC886N03LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC889N03LSGE8178 vs BSC886N03LSGATMA1 |
DMN3010LK3-13 | Power Field-Effect Transistor, 13.1A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Diodes Incorporated | BSC889N03LSGE8178 vs DMN3010LK3-13 |
BSC886N03LSGE8178 | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC889N03LSGE8178 vs BSC886N03LSGE8178 |
FDC796N_NL | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SUPERSOT-6 | Fairchild Semiconductor Corporation | BSC889N03LSGE8178 vs FDC796N_NL |