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Part Details for FQD5N20LTM by onsemi
Overview of FQD5N20LTM by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for FQD5N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82C4063
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Newark | Transistor, mosfet, n-Channel,200V V(Br)Dss,3.8A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FQD5N20LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
FQD5N20LTM
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TME | Transistor: N-MOSFET, unipolar, 200V, 2.4A, Idm: 15.2A, 37W, DPAK Min Qty: 1 | 0 |
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$0.3960 / $1.1860 | RFQ |
Part Details for FQD5N20LTM
FQD5N20LTM CAD Models
FQD5N20LTM Part Data Attributes
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FQD5N20LTM
onsemi
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Datasheet
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Compare Parts:
FQD5N20LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.8 A | |
| Drain-source On Resistance-Max | 1.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 37 W | |
| Pulsed Drain Current-Max (IDM) | 15.2 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD5N20LTM
This table gives cross-reference parts and alternative options found for FQD5N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD5N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD4N20E1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | onsemi | FQD5N20LTM vs MTD4N20E1 |
| MTD4N20E-1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | FQD5N20LTM vs MTD4N20E-1 |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | Rochester Electronics LLC | FQD5N20LTM vs MTD4N20E |
| FQD5N20LTM | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | FQD5N20LTM vs FQD5N20LTM |
| MTD4N20E-T4 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | FQD5N20LTM vs MTD4N20E-T4 |