Part Details for MTD4N20E-1 by Rochester Electronics LLC
Overview of MTD4N20E-1 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for MTD4N20E-1
MTD4N20E-1 CAD Models
MTD4N20E-1 Part Data Attributes
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MTD4N20E-1
Rochester Electronics LLC
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Datasheet
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MTD4N20E-1
Rochester Electronics LLC
4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | CASE 369C, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369C | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTD4N20E-1
This table gives cross-reference parts and alternative options found for MTD4N20E-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD4N20E-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD4N20E1 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | onsemi | MTD4N20E-1 vs MTD4N20E1 |
| FQD5N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL | onsemi | MTD4N20E-1 vs FQD5N20LTM |
| MTD4N20E | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D, DPAK-3 | Rochester Electronics LLC | MTD4N20E-1 vs MTD4N20E |
| FQD5N20LTM | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | MTD4N20E-1 vs FQD5N20LTM |
| MTD4N20E-T4 | 4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTD4N20E-1 vs MTD4N20E-T4 |