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Transistors / Power Field-Effect Transistors / IPB034N06L3GATMA1
Datasheets
IPB034N06L3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Part Details for IPB034N06L3GATMA1 by Infineon Technologies AG

Overview of IPB034N06L3GATMA1 by Infineon Technologies AG

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Price & Stock for IPB034N06L3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y2003
Newark Mosfet, N-Ch, 60V, 90A, 175Deg C, 167W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:90A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPB034N06L3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1857
  • 1 $2.0600
$2.0600 Buy Now
DISTI # 86AK5154
Newark Mosfet, N-Ch, 60V, 90A, To-263 Rohs Compliant: Yes |Infineon IPB034N06L3GATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $1.1500
$1.1500 Buy Now
DISTI # IPB034N06L3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 90A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1532
In Stock
  • 1 $1.9900
  • 10 $1.6500
  • 100 $1.3129
  • 500 $1.1109
  • 1,000 $0.9426
  • 2,000 $0.8954
  • 5,000 $0.8618
  • 10,000 $0.8333
$0.8333 / $1.9900 Buy Now
DISTI # IPB034N06L3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB034N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.9166
  • 2,000 $0.8888
  • 4,000 $0.8610
  • 6,000 $0.8333
  • 8,000 $0.8055
  • 10,000 $0.7777
  • 100,000 $0.7499
$0.7499 / $0.9166 Buy Now
DISTI # 726-IPB034N06L3GATMA
Mouser Electronics MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant 0
Order Now
DISTI # V36:1790_06383402
Arrow Electronics Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Date Code: 2339 Americas - 41000
  • 1,000 $0.9035
  • 2,000 $0.7456
  • 5,000 $0.7381
  • 10,000 $0.7113
$0.7113 / $0.9035 Buy Now
DISTI # E02:0323_01882717
Arrow Electronics Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Date Code: 2339 Europe - 6000
  • 1,000 $0.8010
  • 2,000 $0.6870
  • 5,000 $0.6801
  • 10,000 $0.6582
$0.6582 / $0.8010 Buy Now
Future Electronics Single N-Channel 60 V 3.4 mOhm 59 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Container: Reel 8000
Reel
  • 1,000 $0.7900
  • 2,000 $0.7750
  • 3,000 $0.7650
  • 4,000 $0.7550
  • 5,000 $0.7350
$0.7350 / $0.7900 Buy Now
Future Electronics Single N-Channel 60 V 3.4 mOhm 59 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Container: Reel 0
Reel
  • 1,000 $0.7900
  • 2,000 $0.7750
  • 3,000 $0.7650
  • 4,000 $0.7550
  • 5,000 $0.7350
$0.7350 / $0.7900 Buy Now
DISTI # 77838700
Verical Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2339 Americas - 41000
  • 5,000 $0.7381
  • 10,000 $0.7113
$0.7113 / $0.7381 Buy Now
DISTI # 71298331
Verical Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2339 Americas - 6000
  • 1,000 $0.8086
  • 2,000 $0.6936
  • 5,000 $0.6866
  • 10,000 $0.6645
$0.6645 / $0.8086 Buy Now
Ameya Holding Limited   Min Qty: 1000 3925
  • 1,000 $1.5059
  • 5,000 $1.4607
$1.4607 / $1.5059 Buy Now
CHIPMALL.COM LIMITED OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies SMPS such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. 1981
  • 1 $0.9842
  • 100 $0.9525
  • 1,000 $0.9207
$0.9207 / $0.9842 Buy Now
DISTI # SP000398062
EBV Elektronik Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000398062) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPB034N06L3GATMA1

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IPB034N06L3GATMA1 Part Data Attributes

Parametric Data
IPB034N06L3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB034N06L3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 165 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0034 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Pulsed Drain Current-Max (IDM) 360 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB034N06L3GATMA1

This table gives cross-reference parts and alternative options found for IPB034N06L3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB034N06L3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB034N06N3GATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7 Infineon Technologies AG IPB034N06L3GATMA1 vs IPB034N06N3GATMA1
IPD034N06N3GATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPB034N06L3GATMA1 vs IPD034N06N3GATMA1
IPD100N06S403ATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPB034N06L3GATMA1 vs IPD100N06S403ATMA1
IPB90N06S4L04ATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB034N06L3GATMA1 vs IPB90N06S4L04ATMA1
IPB034N06L3G Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB034N06L3GATMA1 vs IPB034N06L3G
IPB037N06N3GATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB034N06L3GATMA1 vs IPB037N06N3GATMA1
IPB90N06S404ATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB034N06L3GATMA1 vs IPB90N06S404ATMA1
IPB034N06N3G Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7 Infineon Technologies AG IPB034N06L3GATMA1 vs IPB034N06N3G
IPP90N06S4L04AKSA2 Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPB034N06L3GATMA1 vs IPP90N06S4L04AKSA2
IPD90N06S4L03ATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPB034N06L3GATMA1 vs IPD90N06S4L03ATMA1

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