Datasheets
IRF7303PBF by:

Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7303PBF by International Rectifier

Overview of IRF7303PBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRF7303PBF

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 10
  • 1 $0.4185
$0.4185 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant Europe - 475
RFQ

Part Details for IRF7303PBF

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IRF7303PBF Part Data Attributes:

IRF7303PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF7303PBF International Rectifier Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code SOIC
Package Description LEAD FREE, SO-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7303PBF

This table gives cross-reference parts and alternative options found for IRF7303PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7303PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7303TRPBF Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 International Rectifier IRF7303PBF vs IRF7303TRPBF
IRF7303 Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7303PBF vs IRF7303
IRF7303 Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7303PBF vs IRF7303
Part Number Description Manufacturer Compare
IRF7101TRPBF Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 International Rectifier IRF7303PBF vs IRF7101TRPBF
FDS6975 Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation IRF7303PBF vs FDS6975
MMDF3N03HD 2.8A, 30V, 0.09ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7303PBF vs MMDF3N03HD
HP4936DYT 5.8A, 30V, 0.037ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC IRF7303PBF vs HP4936DYT
IRF7416QPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7303PBF vs IRF7416QPBF
IRF7314PBF Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7303PBF vs IRF7314PBF
IRF7403TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7303PBF vs IRF7403TRPBF
IRF7306TRPBF Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7303PBF vs IRF7306TRPBF
IRF7416TRPBF Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7303PBF vs IRF7416TRPBF
MMDF2N02E 3.6A, 25V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 Motorola Mobility LLC IRF7303PBF vs MMDF2N02E

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