Part Details for IRF830BPBF by Vishay Intertechnologies
Overview of IRF830BPBF by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF830BPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99W8855
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Newark | Mosfet, N-Ch, 500V, 5.3A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:5.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Vishay IRF830BPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 139 |
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$0.5390 / $0.5880 | Buy Now |
DISTI #
IRF830BPBF
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Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin TO-220AB - Tape and Reel (Alt: IRF830BPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.4360 / $0.5540 | Buy Now |
DISTI #
99W8855
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Avnet Americas | Trans MOSFET N-CH 500V 5.3A 3-Pin TO-220AB - Bulk (Alt: 99W8855) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 139 Partner Stock |
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$0.7970 / $1.1500 | Buy Now |
DISTI #
78-IRF830BPBF
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Mouser Electronics | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS RoHS: Compliant | 647 |
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$0.4620 / $0.7600 | Buy Now |
DISTI #
IRF830BPBF
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TTI | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$0.4320 | Buy Now |
DISTI #
IRF830BPBF
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TME | Transistor: N-MOSFET, unipolar, 500V, 5.3A, Idm: 10A, 104W, TO220AB Min Qty: 1 | 0 |
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$0.5640 / $0.8450 | RFQ |
DISTI #
IRF830BPBF
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EBV Elektronik | (Alt: IRF830BPBF) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF830BPBF
IRF830BPBF CAD Models
IRF830BPBF Part Data Attributes:
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IRF830BPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF830BPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 28.8 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 50 ns | |
Turn-on Time-Max (ton) | 46 ns |
Alternate Parts for IRF830BPBF
This table gives cross-reference parts and alternative options found for IRF830BPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830BPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N7290D1 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | IRF830BPBF vs 2N7290D1 |
2N7290D1 | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | Intersil Corporation | IRF830BPBF vs 2N7290D1 |
FQP6N50J69Z | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IRF830BPBF vs FQP6N50J69Z |
KF5N50PZ | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | KEC | IRF830BPBF vs KF5N50PZ |
2N7290R3 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | IRF830BPBF vs 2N7290R3 |
2N7290R1 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | IRF830BPBF vs 2N7290R1 |
SIHP5N50D-E3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF830BPBF vs SIHP5N50D-E3 |
2N7290R4 | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | Intersil Corporation | IRF830BPBF vs 2N7290R4 |
SIHP5N50D-GE3 | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF830BPBF vs SIHP5N50D-GE3 |
2N7290D4 | 5A, 500V, 1.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA | Intersil Corporation | IRF830BPBF vs 2N7290D4 |