Datasheets
IRFL110PBF by:

Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL110PBF by Vishay Intertechnologies

Overview of IRFL110PBF by Vishay Intertechnologies

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Price & Stock for IRFL110PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFL110PBF
Avnet Americas Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # IRFL110PBF
Avnet Americas Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # IRFL110PBF
Avnet Americas Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ
DISTI # IRFL110PBF
Avnet Americas Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk 0
RFQ

Part Details for IRFL110PBF

IRFL110PBF CAD Models

IRFL110PBF Part Data Attributes:

IRFL110PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFL110PBF Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-261AA
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL110PBF

This table gives cross-reference parts and alternative options found for IRFL110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL110TR Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Siliconix IRFL110PBF vs IRFL110TR
IRFL110 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier IRFL110PBF vs IRFL110
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies IRFL110PBF vs IRFL110
Part Number Description Manufacturer Compare
IRFL4310 Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRFL110PBF vs IRFL4310
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL110PBF vs BSP373NH6327
IRLM120ATF_NL Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL110PBF vs IRLM120ATF_NL
SIHFL110TR-GE3 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL110PBF vs SIHFL110TR-GE3
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL110PBF vs IRFL110TRPBF
IRFL4310TR Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRFL110PBF vs IRFL4310TR
IRLM120A Power Field-Effect Transistor onsemi IRFL110PBF vs IRLM120A
BSP372 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG IRFL110PBF vs BSP372
STN2NF10 N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package STMicroelectronics IRFL110PBF vs STN2NF10
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies IRFL110PBF vs IRFL110

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