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Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFL110PBF
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Avnet Americas | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk | 0 |
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RFQ | |
DISTI #
IRFL110PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk | 0 |
|
RFQ | |
DISTI #
IRFL110PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk | 0 |
|
RFQ | |
DISTI #
IRFL110PBF
|
Avnet Americas | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 - Bulk (Alt: IRFL110PBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Container: Bulk | 0 |
|
RFQ |
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IRFL110PBF
Vishay Intertechnologies
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Datasheet
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Compare Parts:
IRFL110PBF
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-261AA | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE ENERGY RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1.5 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 15 pF | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFL110PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFL110TR | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN | Vishay Siliconix | IRFL110PBF vs IRFL110TR |
IRFL110 | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | International Rectifier | IRFL110PBF vs IRFL110 |
IRFL110 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | Vishay Intertechnologies | IRFL110PBF vs IRFL110 |