Datasheets
IRFL4310PBF by:

Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN

Part Details for IRFL4310PBF by International Rectifier

Overview of IRFL4310PBF by International Rectifier

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFL4310PBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   1648
RFQ
Bristol Electronics   669
RFQ
Quest Components MOSFET Transistor, N-Channel, SOT-223 320
  • 1 $1.0650
  • 24 $0.6390
  • 95 $0.5325
$0.5325 / $1.0650 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 81
  • 1 $1.4500
  • 18 $0.8700
  • 70 $0.7250
$0.7250 / $1.4500 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 535
  • 1 $3.4000
  • 177 $1.5725
  • 383 $1.4025
$1.4025 / $3.4000 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 9
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

Part Details for IRFL4310PBF

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IRFL4310PBF Part Data Attributes:

IRFL4310PBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFL4310PBF International Rectifier Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL4310PBF

This table gives cross-reference parts and alternative options found for IRFL4310PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL4310PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL4310TR Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRFL4310PBF vs IRFL4310TR
IRFL4310 Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRFL4310PBF vs IRFL4310
IRFL4310PBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Infineon Technologies AG IRFL4310PBF vs IRFL4310PBF
Part Number Description Manufacturer Compare
IRFL4310 Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, Infineon Technologies AG IRFL4310PBF vs IRFL4310
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL4310PBF vs BSP373NH6327
IRLM120ATF_NL Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL4310PBF vs IRLM120ATF_NL
SIHFL110TR-GE3 Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, SOT-223, 4 PIN Vishay Intertechnologies IRFL4310PBF vs SIHFL110TR-GE3
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL4310PBF vs IRFL110TRPBF
IRFL4310TR Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier IRFL4310PBF vs IRFL4310TR
IRLM120A Power Field-Effect Transistor onsemi IRFL4310PBF vs IRLM120A
BSP372 Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG IRFL4310PBF vs BSP372
STN2NF10 N-channel 100 V, 0.23 Ohm, 2.4 A STripFET(TM) II POWER MOSFET in SOT-223 package STMicroelectronics IRFL4310PBF vs STN2NF10
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies IRFL4310PBF vs IRFL110

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