Datasheets
IS46DR16320C-25DBLA1-TR by: Integrated Silicon Solution Inc

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84

Part Details for IS46DR16320C-25DBLA1-TR by Integrated Silicon Solution Inc

Overview of IS46DR16320C-25DBLA1-TR by Integrated Silicon Solution Inc

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Price & Stock for IS46DR16320C-25DBLA1-TR

Part # Distributor Description Stock Price Buy
Newark Automotive (Tc: -40 To +95C), 512M, 1.8V, Ddr2, 32Mx16, 400Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs, T&r |Integrated Silicon Solution (Issi) IS46DR16320C-25DBLA1-TR Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,200 $5.7600
$5.7600 Buy Now
DISTI # IS46DR16320C-25DBLA1-TR-ND
DigiKey IC DRAM 512MBIT PAR 84TWBGA Min Qty: 2500 Lead time: 10 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 2,500 $6.7369
$6.7369 Buy Now
DISTI # IS46DR16320C-25DBL
Avnet Americas DRAM Chip DDR2 SDRAM 512M-Bit 32M x 16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS46DR16320C-25DBL) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,500 $7.4052
  • 5,000 $7.2116
  • 10,000 $6.8728
  • 15,000 $6.6792
  • 20,000 $6.4372
  • 25,000 $6.2436
  • 250,000 $6.0500
$6.0500 / $7.4052 Buy Now
DISTI # 870-6D16320C25DBLA1T
Mouser Electronics DRAM Automotive (Tc: -40 to +95C), 512M, 1.8V, DDR2, 32Mx16, 400Mhz a. CL5, 84 ball BGA (8mmx12.5mm) RoHS, T&R RoHS: Compliant 0
  • 2,500 $6.3400
$6.3400 Order Now

Part Details for IS46DR16320C-25DBLA1-TR

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IS46DR16320C-25DBLA1-TR Part Data Attributes:

IS46DR16320C-25DBLA1-TR Integrated Silicon Solution Inc
Buy Now Datasheet
Compare Parts:
IS46DR16320C-25DBLA1-TR Integrated Silicon Solution Inc DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description TFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 10 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm

Alternate Parts for IS46DR16320C-25DBLA1-TR

This table gives cross-reference parts and alternative options found for IS46DR16320C-25DBLA1-TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS46DR16320C-25DBLA1-TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4C32M16D2B-25BIN DDR DRAM, Alliance Memory Inc IS46DR16320C-25DBLA1-TR vs AS4C32M16D2B-25BIN
M14D5121632A-1.3BG2K DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84 Elite Semiconductor Memory Technology Inc IS46DR16320C-25DBLA1-TR vs M14D5121632A-1.3BG2K
M14D5121632A-2.5BIG2A DDR DRAM, Elite Semiconductor Memory Technology Inc IS46DR16320C-25DBLA1-TR vs M14D5121632A-2.5BIG2A
IS43DR16320C-25DBLI-TR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc IS46DR16320C-25DBLA1-TR vs IS43DR16320C-25DBLI-TR
K4T51163QQ-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor IS46DR16320C-25DBLA1-TR vs K4T51163QQ-BCF70
SCX18T512160AF-25DI DDR DRAM, Xi'an UniIC Semiconductors Co Ltd IS46DR16320C-25DBLA1-TR vs SCX18T512160AF-25DI
M14D5121632A-2.5BBG2M DDR DRAM, Elite Semiconductor Memory Technology Inc IS46DR16320C-25DBLA1-TR vs M14D5121632A-2.5BBG2M
SCX18T512160AF-25E DDR DRAM, Xi'an UniIC Semiconductors Co Ltd IS46DR16320C-25DBLA1-TR vs SCX18T512160AF-25E
MT47H32M16HR-25EIT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc IS46DR16320C-25DBLA1-TR vs MT47H32M16HR-25EIT:H
K4T51163QQ-BIE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor IS46DR16320C-25DBLA1-TR vs K4T51163QQ-BIE70

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