Part Details for IXFT12N50F by Littelfuse Inc
Overview of IXFT12N50F by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for IXFT12N50F
IXFT12N50F CAD Models
IXFT12N50F Part Data Attributes
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IXFT12N50F
Littelfuse Inc
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Datasheet
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IXFT12N50F
Littelfuse Inc
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFT12N50F
This table gives cross-reference parts and alternative options found for IXFT12N50F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT12N50F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHD12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | IXFT12N50F vs SIHD12N50E-GE3 |
| IPP60R385CP | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IXFT12N50F vs IPP60R385CP |
| FCP360N65S3R0 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 10 A, 360 mΩ, TO-220, 800-TUBE | onsemi | IXFT12N50F vs FCP360N65S3R0 |
| 2N7306 | 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | Intersil Corporation | IXFT12N50F vs 2N7306 |
| IPI60R385CPXKSA1 | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IXFT12N50F vs IPI60R385CPXKSA1 |