There are no models available for this part yet.
Overview of IPI60R385CPXKSA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IPI60R385CPXKSA1 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
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DISTI #
IPI60R385CPXKSA1
|
Avnet Americas | - Rail/Tube (Alt: IPI60R385CPXKSA1) RoHS: Compliant Min Qty: 353 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 70887 Partner Stock |
|
$0.8382 / $1.0400 | Buy Now | |
| Rochester Electronics | IPI60R385 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 13500 |
|
$0.8803 / $1.0400 | Buy Now |
CAD Models for IPI60R385CPXKSA1 by Infineon Technologies AG
Part Data Attributes for IPI60R385CPXKSA1 by Infineon Technologies AG
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|
|
|---|---|
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Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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|
Part Package Code
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TO-262AA
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Package Description
|
GREEN, PLASTIC, TO-262, 3 PIN
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Pin Count
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3
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Factory Lead Time
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4 Weeks
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Avalanche Energy Rating (Eas)
|
227 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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600 V
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Drain Current-Max (ID)
|
9 A
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Drain-source On Resistance-Max
|
0.385 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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|
JEDEC-95 Code
|
TO-262AA
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JESD-30 Code
|
R-PSIP-T3
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JESD-609 Code
|
e3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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IN-LINE
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Polarity/Channel Type
|
N-CHANNEL
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|
Pulsed Drain Current-Max (IDM)
|
27 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Finish
|
TIN
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for IPI60R385CPXKSA1
This table gives cross-reference parts and alternative options found for IPI60R385CPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R385CPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R420CFDATMA1 | Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPI60R385CPXKSA1 vs IPB65R420CFDATMA1 |
| IPB65R420CFD | Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPI60R385CPXKSA1 vs IPB65R420CFD |
| 2N7306 | 12A, 500V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA | Intersil Corporation | IPI60R385CPXKSA1 vs 2N7306 |
| SIHD12N50E-GE3 | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | IPI60R385CPXKSA1 vs SIHD12N50E-GE3 |
| SPP12N50C3XKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPI60R385CPXKSA1 vs SPP12N50C3XKSA1 |
| SPP12N50C3HKSA1 | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPI60R385CPXKSA1 vs SPP12N50C3HKSA1 |
| IXFT12N50F | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IPI60R385CPXKSA1 vs IXFT12N50F |
| 2N7306 | Power Field-Effect Transistor, 12A I(D), 500V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA | Harris Semiconductor | IPI60R385CPXKSA1 vs 2N7306 |
| FCP9N60N | Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 9 A, 385 mΩ, TO-220, 800-TUBE | onsemi | IPI60R385CPXKSA1 vs FCP9N60N |
| IXFT12N50F | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | IPI60R385CPXKSA1 vs IXFT12N50F |