Datasheets
NT5TU32M16EG-ACT by: Nanya Technology Corporation

DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, VFBGA-84

Part Details for NT5TU32M16EG-ACT by Nanya Technology Corporation

Overview of NT5TU32M16EG-ACT by Nanya Technology Corporation

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Applications Computing and Data Storage

Part Details for NT5TU32M16EG-ACT

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NT5TU32M16EG-ACT Part Data Attributes:

NT5TU32M16EG-ACT Nanya Technology Corporation
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NT5TU32M16EG-ACT Nanya Technology Corporation DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, VFBGA-84
Part Life Cycle Code Active
Ihs Manufacturer NANYA TECHNOLOGY CORP
Package Description VFBGA,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Organization 32MX16
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Seated Height-Max 1 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for NT5TU32M16EG-ACT

This table gives cross-reference parts and alternative options found for NT5TU32M16EG-ACT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5TU32M16EG-ACT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NT5TU32M16EG-ACA DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, VFBGA-84 Nanya Technology Corporation NT5TU32M16EG-ACT vs NT5TU32M16EG-ACA
Part Number Description Manufacturer Compare
AS4C32M16D2B-25BIN DDR DRAM, Alliance Memory Inc NT5TU32M16EG-ACT vs AS4C32M16D2B-25BIN
M14D5121632A-1.3BG2K DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84 Elite Semiconductor Memory Technology Inc NT5TU32M16EG-ACT vs M14D5121632A-1.3BG2K
M14D5121632A-2.5BIG2A DDR DRAM, Elite Semiconductor Memory Technology Inc NT5TU32M16EG-ACT vs M14D5121632A-2.5BIG2A
IS43DR16320C-25DBLI-TR DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc NT5TU32M16EG-ACT vs IS43DR16320C-25DBLI-TR
K4T51163QQ-BCF70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 Samsung Semiconductor NT5TU32M16EG-ACT vs K4T51163QQ-BCF70
SCX18T512160AF-25DI DDR DRAM, Xi'an UniIC Semiconductors Co Ltd NT5TU32M16EG-ACT vs SCX18T512160AF-25DI
M14D5121632A-2.5BBG2M DDR DRAM, Elite Semiconductor Memory Technology Inc NT5TU32M16EG-ACT vs M14D5121632A-2.5BBG2M
SCX18T512160AF-25E DDR DRAM, Xi'an UniIC Semiconductors Co Ltd NT5TU32M16EG-ACT vs SCX18T512160AF-25E
MT47H32M16HR-25EIT:H DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc NT5TU32M16EG-ACT vs MT47H32M16HR-25EIT:H
K4T51163QQ-BIE70 DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor NT5TU32M16EG-ACT vs K4T51163QQ-BIE70

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