Part Details for SI1400DL-T1-GE3 by Vishay Intertechnologies
Overview of SI1400DL-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for SI1400DL-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
90AJ5056
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Newark | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet |Vishay SI1400DL-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.1680 / $0.5480 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
15000 Partner Stock |
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$0.1122 / $0.3845 | Buy Now |
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Bristol Electronics | 2929 |
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RFQ | ||
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Quest Components | 2343 |
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$0.1790 / $0.8950 | Buy Now | |
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DISTI #
VISHAY SI1400DL-T1-GE3
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PEI Genesis | Small Signal Transistor | 15000 |
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Buy Now | |
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Sense Electronic Company Limited | SC70-6 | 23711 |
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RFQ |
Part Details for SI1400DL-T1-GE3
SI1400DL-T1-GE3 CAD Models
SI1400DL-T1-GE3 Part Data Attributes
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SI1400DL-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI1400DL-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.625 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI1400DL-T1-GE3
This table gives cross-reference parts and alternative options found for SI1400DL-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1400DL-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDG327NZ | 20V N-Channel PowerTrench® MOSFET, 1.5 A, 90 mΩ, 3000-REEL | onsemi | SI1400DL-T1-GE3 vs FDG327NZ |
| SI1416EDH-T1-GE3 | Small Signal Field-Effect Transistor, 3.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, SOT-363, 6 PIN | Vishay Intertechnologies | SI1400DL-T1-GE3 vs SI1416EDH-T1-GE3 |
| SI1416EDH-T1-GE3 | TRANSISTOR 3900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI1400DL-T1-GE3 vs SI1416EDH-T1-GE3 |
| SI1400DL-T1-E3 | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | SI1400DL-T1-GE3 vs SI1400DL-T1-E3 |
| FDG327N_NL | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SI1400DL-T1-GE3 vs FDG327N_NL |
| FDG329N_NL | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SI1400DL-T1-GE3 vs FDG329N_NL |
| FDG327NZ_NL | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SI1400DL-T1-GE3 vs FDG327NZ_NL |
| SI1426DH | Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Siliconix | SI1400DL-T1-GE3 vs SI1426DH |
| SI1426DH-T1-E3 | Small Signal Field-Effect Transistor, 2.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Intertechnologies | SI1400DL-T1-GE3 vs SI1426DH-T1-E3 |
| FDG329N | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | SI1400DL-T1-GE3 vs FDG329N |