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Part Details for SI2308BDS-T1-E3 by Vishay Siliconix
Overview of SI2308BDS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2308BDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI2308BDS-T1-E3CT-ND
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DigiKey | MOSFET N-CH 60V 2.3A SOT23-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
33186 In Stock |
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$0.1539 / $0.5300 | Buy Now |
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DISTI #
70026194
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RS | SI2308BDS-T1-E3 N-channel MOSFET Module, 2.3 A, 60 V, 3-Pin TO-236 | Siliconix / Vishay SI2308BDS-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.3850 / $0.4530 | RFQ |
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New Advantage Corporation | Single N-Channel 60 V 156 mOhm Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 132000 |
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$0.1853 / $0.1986 | Buy Now |
Part Details for SI2308BDS-T1-E3
SI2308BDS-T1-E3 CAD Models
SI2308BDS-T1-E3 Part Data Attributes
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SI2308BDS-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2308BDS-T1-E3
Vishay Siliconix
TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 0.156 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.66 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2308BDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2308BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2308BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2308BDS-T1-GE3 | TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal | Vishay Siliconix | SI2308BDS-T1-E3 vs SI2308BDS-T1-GE3 |
| SI2308BDS-T1-E3 | Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Vishay Intertechnologies | SI2308BDS-T1-E3 vs SI2308BDS-T1-E3 |
| SI2308BDS-T1-BE3 | Small Signal Field-Effect Transistor, | Vishay Intertechnologies | SI2308BDS-T1-E3 vs SI2308BDS-T1-BE3 |
| SI2308BDS-T1-GE3 | Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | Vishay Intertechnologies | SI2308BDS-T1-E3 vs SI2308BDS-T1-GE3 |