Part Details for SIHF9630STRL-GE3 by Vishay Intertechnologies
Overview of SIHF9630STRL-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SIHF9630STRL-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHF9630STRL-GE3
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Avnet Americas | - Tape and Reel (Alt: SIHF9630STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.5157 / $0.6551 | Buy Now |
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DISTI #
78-SIHF9630STRL-GE3
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Mouser Electronics | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) | 0 |
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$0.4780 / $1.2700 | Order Now |
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Future Electronics | P-Channel 200V 6.5A 3W 74W Surface Mount D²PAK TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.4700 / $0.5100 | Buy Now |
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Future Electronics | P-Channel 200V 6.5A 3W 74W Surface Mount D²PAK TO-263 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.4700 / $0.5100 | Buy Now |
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Bristol Electronics | 110 |
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RFQ | ||
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Quest Components | 88 |
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$0.9560 / $1.9120 | Buy Now | |
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DISTI #
SIHF9630STRL-GE3
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TTI | MOSFET -200V Vds 20V Vgs D2PAK (TO-263) pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$0.4780 / $0.5540 | Buy Now |
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CHIPMALL.COM LIMITED | 111 |
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$0.8437 | Buy Now | |
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DISTI #
SIHF9630STRL-GE3
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EBV Elektronik | (Alt: SIHF9630STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHF9630STRL-GE3
SIHF9630STRL-GE3 CAD Models
SIHF9630STRL-GE3 Part Data Attributes
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SIHF9630STRL-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF9630STRL-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 74 W | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF9630STRL-GE3
This table gives cross-reference parts and alternative options found for SIHF9630STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF9630STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | SIHF9630STRL-GE3 vs IRF9630S |
| IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | SIHF9630STRL-GE3 vs IRF9630S |
| SIHF9630S-GE3 | TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF9630STRL-GE3 vs SIHF9630S-GE3 |
| IRF9630STRLPBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF9630STRL-GE3 vs IRF9630STRLPBF |
| IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | Vishay Intertechnologies | SIHF9630STRL-GE3 vs IRF9630S |
| FQB7P20 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | SIHF9630STRL-GE3 vs FQB7P20 |
| FQB7P20TM_F085 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | SIHF9630STRL-GE3 vs FQB7P20TM_F085 |
| SIHF9630S-GE3 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF9630STRL-GE3 vs SIHF9630S-GE3 |
| IRF9630STRLPBF | TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF9630STRL-GE3 vs IRF9630STRLPBF |
| FQB7P20TM | Power MOSFET, P-Channel, QFET®, -200 V, -7.3 A, 690 mΩ, D2PAK, 800-REEL | onsemi | SIHF9630STRL-GE3 vs FQB7P20TM |