Datasheets
APT11F80B by:

Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD

Part Details for APT11F80B by Microchip Technology Inc

Overview of APT11F80B by Microchip Technology Inc

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for APT11F80B

Part # Distributor Description Stock Price Buy
DISTI # 78AH5588
Newark Fredfet Mos8 800 V 11 A To-247 3 To-247 Tube Rohs Compliant: Yes |Microchip APT11F80B Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $4.7100
  • 250 $4.5300
  • 500 $4.4400
$4.4400 / $4.7100 Buy Now
DISTI # APT11F80B-ND
DigiKey MOSFET N-CH 800V 12A TO247 Min Qty: 100 Lead time: 49 Weeks Container: Tube Temporarily Out of Stock
  • 100 $4.4250
$4.4250 Buy Now
DISTI # APT11F80B
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT11F80B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $5.4600
  • 100 $4.7100
  • 250 $4.5300
  • 500 $4.4400
$4.4400 / $5.4600 Buy Now
DISTI # 494-APT11F80B
Mouser Electronics MOSFET FREDFET MOS8 800 V 11 A TO-247 RoHS: Compliant 93
  • 1 $5.4600
  • 100 $4.7100
$4.7100 / $5.4600 Buy Now
DISTI # APT11F80B
Microchip Technology Inc FREDFET MOS8 800 V 11 A TO-247, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $5.4600
  • 100 $4.7100
  • 250 $4.5300
  • 500 $4.4400
  • 1,000 $4.3200
  • 5,000 $4.1800
$4.1800 / $5.4600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 0
  • 100 $4.7200
$4.7200 Buy Now
Onlinecomponents.com Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $5.3700
  • 25 $5.0600
  • 100 $4.7100
  • 250 $4.5900
  • 500 $4.4100
  • 1,000 $4.3500
  • 2,500 $4.2800
  • 5,000 $4.2200
$4.2200 / $5.3700 Buy Now
DISTI # APT11F80B
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT11F80B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $5.4600
  • 100 $4.7100
  • 250 $4.5300
  • 500 $4.4400
$4.4400 / $5.4600 Buy Now
DISTI # APT11F80B
TME Transistor: N-MOSFET, unipolar, 800V, 8A, Idm: 46A, 337W, TO247-3 Min Qty: 1 0
  • 1 $7.9000
  • 3 $7.1100
  • 10 $6.2800
$6.2800 / $7.9000 RFQ
DISTI # APT11F80B
Avnet Americas Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT11F80B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 49 Weeks, 0 Days Container: Tube 0
  • 1 $5.4600
  • 100 $4.7100
  • 250 $4.5300
  • 500 $4.4400
$4.4400 / $5.4600 Buy Now
NAC FG, FREDFET, 800V, TO-247 RoHS: Compliant Min Qty: 70 Package Multiple: 1 Container: Tube 0
  • 1 $5.2100
  • 100 $4.7200
  • 500 $4.4200
  • 1,000 $4.3200
$4.3200 / $5.2100 Buy Now
DISTI # APT11F80B
Avnet Silica Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 (Alt: APT11F80B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APT11F80B
EBV Elektronik Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 (Alt: APT11F80B) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 7 Weeks, 1 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH Si 600V 12A 3-Pin(3+Tab) TO-247 Tube 0
  • 5 $5.3700
  • 25 $5.0600
  • 100 $4.7100
  • 250 $4.5900
  • 500 $4.4100
  • 1,000 $4.3500
  • 2,500 $4.2800
  • 5,000 $4.2200
$4.2200 / $5.3700 Buy Now

Part Details for APT11F80B

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APT11F80B Part Data Attributes

APT11F80B Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT11F80B Microchip Technology Inc Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-247, 3 PIN
Reach Compliance Code compliant
Factory Lead Time 49 Weeks
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 524 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.9 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 42 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 337 W
Pulsed Drain Current-Max (IDM) 46 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT11F80B

This table gives cross-reference parts and alternative options found for APT11F80B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT11F80B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFP10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Littelfuse Inc APT11F80B vs IXFP10N80P
IXFQ10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXYS Corporation APT11F80B vs IXFQ10N80P
IXFA10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 Littelfuse Inc APT11F80B vs IXFA10N80P
IXFA10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 IXYS Corporation APT11F80B vs IXFA10N80P
IXFH10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN IXYS Corporation APT11F80B vs IXFH10N80P
IXFP10N80P Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 IXYS Corporation APT11F80B vs IXFP10N80P

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