Parametric results for: APT11F80B under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 2

2 hits Apply

524.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

800 V 2

2 hits Apply

Drain Current-Max (ID) (2)

11 A 1 12 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (2)

900 mΩ 1 1 Ω 1

Min (Ω) - Max (Ω)

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

42 pF 1

2 hits Apply

TO-247AD 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

337 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply