Datasheets
APT20M11JVR by:

Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT20M11JVR by Microchip Technology Inc

Overview of APT20M11JVR by Microchip Technology Inc

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for APT20M11JVR

Part # Distributor Description Stock Price Buy
DISTI # 78AH5735
Newark Mosfet Mos5 200 V 11 Mohm Sot-227 4 Sot-227 Tube Rohs Compliant: Yes |Microchip APT20M11JVR Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $72.3300
  • 100 $62.4900
  • 250 $60.1300
  • 500 $58.7300
$58.7300 / $72.3300 Buy Now
DISTI # APT20M11JVR-ND
DigiKey MOSFET N-CH 200V 175A ISOTOP Min Qty: 1 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 1 $72.3300
  • 100 $58.7250
$58.7250 / $72.3300 Buy Now
DISTI # APT20M11JVR
Avnet Americas Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 - Rail/Tube (Alt: APT20M11JVR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $72.3300
  • 100 $62.4900
  • 250 $60.1300
  • 500 $58.7300
$58.7300 / $72.3300 Buy Now
DISTI # 494-APT20M11JVR
Mouser Electronics Discrete Semiconductor Modules MOSFET MOS5 200 V 11 mOhm SOT-227 RoHS: Compliant 0
  • 1 $72.3300
$72.3300 Order Now
DISTI # APT20M11JVR
Microchip Technology Inc MOSFET MOS5 200 V 11 mOhm SOT-227, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $72.3300
  • 100 $62.4900
  • 250 $60.1300
  • 500 $58.7300
  • 1,000 $57.3100
  • 5,000 $55.4300
$55.4300 / $72.3300 Buy Now
Future Electronics MOSFET N-CH 200V 175A SOT-227 RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 1 0
  • 10 $62.6400
$62.6400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube 0
  • 1 $70.1900
  • 5 $64.3100
  • 10 $62.5600
  • 25 $58.5500
  • 50 $57.6700
  • 100 $56.8100
  • 250 $55.9600
$55.9600 / $70.1900 Buy Now
DISTI # APT20M11JVR
Avnet Americas Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 - Rail/Tube (Alt: APT20M11JVR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $72.3300
  • 100 $62.4900
  • 250 $60.1300
  • 500 $58.7300
$58.7300 / $72.3300 Buy Now
DISTI # APT20M11JVR
TME Module, single transistor, 200V, 175A, ISOTOP, screw, Idm: 700A Min Qty: 1 3
  • 1 $73.5000
  • 3 $72.5000
  • 10 $71.5300
$71.5300 / $73.5000 Buy Now
DISTI # APT20M11JVR
Avnet Americas Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 - Rail/Tube (Alt: APT20M11JVR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 43 Weeks, 6 Days Container: Tube 0
  • 1 $72.3300
  • 100 $62.4900
  • 250 $60.1300
  • 500 $58.7300
$58.7300 / $72.3300 Buy Now
NAC FG, MOSFET, 200V, 0.011_OHM, SOT-227 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Container: Tube 0
  • 1 $67.1100
  • 100 $61.8200
  • 500 $58.7200
  • 800 $57.2900
$57.2900 / $67.1100 Buy Now
DISTI # APT20M11JVR
Avnet Silica Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 (Alt: APT20M11JVR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 5 Weeks, 3 Days Silica - 0
Buy Now
DISTI # APT20M11JVR
EBV Elektronik Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 (Alt: APT20M11JVR) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 6 Weeks, 2 Days EBV - 0
Buy Now
Master Electronics Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 Tube 0
  • 1 $70.1900
  • 5 $64.3100
  • 10 $62.5600
  • 25 $58.5500
  • 50 $57.6700
  • 100 $56.8100
  • 250 $55.9600
$55.9600 / $70.1900 Buy Now

Part Details for APT20M11JVR

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APT20M11JVR Part Data Attributes

APT20M11JVR Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
APT20M11JVR Microchip Technology Inc Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks, 6 Days
Additional Feature HIGH VOLTAGE
Avalanche Energy Rating (Eas) 3600 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 175 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 700 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT20M11JVR

This table gives cross-reference parts and alternative options found for APT20M11JVR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT20M11JVR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT20M11JVR Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Microsemi Corporation APT20M11JVR vs APT20M11JVR
Part Number Description Manufacturer Compare
APT20M11JLL Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT20M11JVR vs APT20M11JLL
IXFR230N20T Power Field-Effect Transistor, 156A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN IXYS Corporation APT20M11JVR vs IXFR230N20T
MMIX1F230N20T Power Field-Effect Transistor, Littelfuse Inc APT20M11JVR vs MMIX1F230N20T
MMIX1F230N20T Power Field-Effect Transistor, 168A I(D), 200V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-21 IXYS Corporation APT20M11JVR vs MMIX1F230N20T
APT20M11JVFR Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT20M11JVR vs APT20M11JVFR

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