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AS4C8M16SA-6TIN by:

Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for AS4C8M16SA-6TIN by Alliance Memory Inc

Overview of AS4C8M16SA-6TIN by Alliance Memory Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Price & Stock for AS4C8M16SA-6TIN

Part # Distributor Description Stock Price Buy
DISTI # 82AK3832
Newark Dram, 128Mbit, 166Mhz, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:8M X 16Bit, Clock Frequency Max:166Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C8M16SA-6TIN Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 108
  • 1 $5.1300
  • 100 $4.2000
  • 250 $3.8500
  • 500 $3.5700
  • 1,000 $3.3600
$3.3600 / $5.1300 Buy Now
DISTI # 55AC1229
Newark Aiaas4C8M16Sa-6Tin Rohs Compliant: Yes |Alliance Memory AS4C8M16SA-6TIN Min Qty: 108 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 1450-1267-ND
DigiKey IC DRAM 128MBIT PAR 54TSOP II Min Qty: 1 Lead time: 6 Weeks Container: Tray 4951
In Stock
  • 1 $4.2200
  • 10 $3.8320
  • 25 $3.7488
  • 40 $3.7285
  • 108 $3.3432
  • 324 $3.3309
  • 540 $3.2092
  • 972 $3.0510
$3.0510 / $4.2200 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Americas DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA - Trays (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days Container: Tray 186641 Factory Stock
  • 108 $3.5100
$3.5100 Buy Now
DISTI # 913-4C8M16SA-6TIN
Mouser Electronics DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Industrial temp - Tray RoHS: Compliant 1053
  • 1 $4.1000
  • 10 $3.7200
  • 108 $3.1600
  • 540 $2.9600
  • 2,592 $2.9300
$2.9300 / $4.1000 Buy Now
Future Electronics AS4C4M16SA Series 128 Mb (8 M x 16) A-die 3.3V 166 MHz SDRAM - TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 108 Package Multiple: 108 Container: Tray 427
Tray
  • 108 $3.1100
  • 648 $3.0600
  • 972 $3.0400
  • 1,620 $3.0000
  • 3,240 $2.9300
$2.9300 / $3.1100 Buy Now
Bristol Electronics   Min Qty: 2 13
  • 2 $4.4800
  • 7 $2.9120
$2.9120 / $4.4800 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Americas DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA - Trays (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days Container: Tray 186641 Factory Stock
  • 108 $3.5100
$3.5100 Buy Now
DISTI # AS4C8M16SA-6TIN
TME IC: DRAM memory, 128MbDRAM, 2Mx16bitx4, 3.3V, 166MHz, 5.4ns Min Qty: 1 75
  • 1 $4.6300
  • 5 $4.3700
  • 25 $3.6900
  • 108 $2.9400
$2.9400 / $4.6300 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Americas DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA - Trays (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days Container: Tray 186641 Factory Stock
  • 108 $3.5100
$3.5100 Buy Now
Karl Kruse GmbH & Co KG SDR 128Mb 8M x 16 3.3V 54pin TSOPII 166 Mhz industrial temp(.63) 193553
RFQ
DISTI # ICDRAM1727
Rutronik SDRAM 128Mb 8Mx16 166MHz TSOP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tray Stock DE - 36
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 108 $3.6100
  • 216 $2.9400
  • 324 $2.8100
  • 540 $2.7900
  • 648 $2.7300
$2.7300 / $3.6100 Buy Now
DISTI # AS4C8M16SA-6TIN
Avnet Asia DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 6 Weeks, 0 Days 0
RFQ
DISTI # AS4C8M16SA-6TIN
Avnet Silica DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TFBGA (Alt: AS4C8M16SA-6TIN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 1 Weeks, 0 Days Silica - 0
Buy Now
DISTI # 4260937
element14 Asia-Pacific DRAM, 128MBIT, 166MHZ, TSOP-II-54 RoHS: Compliant Min Qty: 1 Container: Each 108
  • 1 $3.8623
  • 10 $3.4945
  • 25 $3.3326
  • 50 $3.2223
  • 100 $3.1046
  • 250 $3.0236
  • 500 $3.0163
  • 1,000 $3.0016
$3.0016 / $3.8623 Buy Now
DISTI # 4260937
Farnell DRAM, 128MBIT, 166MHZ, TSOP-II-54 RoHS: Compliant Min Qty: 1 Lead time: 7 Weeks, 1 Days Container: Each 108
  • 1 $4.2200
  • 10 $3.6297
  • 25 $3.3911
  • 50 $3.2655
  • 100 $3.1650
  • 250 $3.1399
  • 500 $3.1022
$3.1022 / $4.2200 Buy Now

Part Details for AS4C8M16SA-6TIN

AS4C8M16SA-6TIN CAD Models

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AS4C8M16SA-6TIN Part Data Attributes

Parametric Data
AS4C8M16SA-6TIN Alliance Memory Inc
Buy Now Datasheet
Compare Parts:
AS4C8M16SA-6TIN Alliance Memory Inc Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Factory Lead Time 6 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Width 10.16 mm

Alternate Parts for AS4C8M16SA-6TIN

This table gives cross-reference parts and alternative options found for AS4C8M16SA-6TIN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16SA-6TIN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M12L128168A-6TG2L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TIN vs M12L128168A-6TG2L
IS42SM16800E-5TL Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TIN vs IS42SM16800E-5TL
K4S281632I-TL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632I-TL600
M12L128168A-6TG2N Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TIN vs M12L128168A-6TG2N
M12L128168A-6TVG2N Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TIN vs M12L128168A-6TVG2N
AS4C8M16SA-6TCN Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TIN vs AS4C8M16SA-6TCN
K4S281632D-TL55 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632D-TL55
K4S281632F-TC600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632F-TC600
K4S281632I-UL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632I-UL600
AS4C8M16S-6TINTR Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TIN vs AS4C8M16S-6TINTR
Part Number Description Manufacturer Compare
IS42S16800B-7TL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TIN vs IS42S16800B-7TL
MT48LC8M16A2P-75L:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Micron Technology Inc AS4C8M16SA-6TIN vs MT48LC8M16A2P-75L:G
H57V1262GTR-75L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 SK Hynix Inc AS4C8M16SA-6TIN vs H57V1262GTR-75L
IBMN312164CT3B-75A Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 IBM AS4C8M16SA-6TIN vs IBMN312164CT3B-75A
IBMN312404CT3B-75H Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 IBM AS4C8M16SA-6TIN vs IBMN312404CT3B-75H
KM416S8030BN-FL Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs KM416S8030BN-FL
HY57Y281620HCLT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc AS4C8M16SA-6TIN vs HY57Y281620HCLT-P
HYB39S128160DE-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG AS4C8M16SA-6TIN vs HYB39S128160DE-7
HY57V281620BT-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc AS4C8M16SA-6TIN vs HY57V281620BT-S
K4S281632C-TC750 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TIN vs K4S281632C-TC750

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