Datasheets
AS4C8M16SA-6TCN by:

Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for AS4C8M16SA-6TCN by Alliance Memory Inc

Overview of AS4C8M16SA-6TCN by Alliance Memory Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Price & Stock for AS4C8M16SA-6TCN

Part # Distributor Description Stock Price Buy
DISTI # 82AK3831
Newark Dram, 166Mhz, 128Mbit, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:8M X 16Bit, Clock Frequency Max:166Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C8M16SA-6TCN Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 108
  • 1 $4.0800
  • 100 $3.3400
  • 250 $3.0600
  • 500 $2.8400
  • 1,000 $2.6700
$2.6700 / $4.0800 Buy Now
DISTI # 1450-1266-ND
DigiKey IC DRAM 128MBIT PAR 54TSOP II Min Qty: 1 Lead time: 6 Weeks Container: Tray 364
In Stock
  • 1 $3.3600
  • 10 $3.0460
  • 25 $2.9800
  • 40 $2.9638
  • 108 $2.6573
  • 324 $2.6477
  • 540 $2.5509
  • 972 $2.4251
$2.4251 / $3.3600 Buy Now
DISTI # 913-4C8M16SA-6TCN
Mouser Electronics DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray RoHS: Compliant 186
  • 1 $3.2600
  • 10 $2.9700
  • 108 $2.5200
  • 540 $2.3500
  • 2,592 $2.2800
$2.2800 / $3.2600 Buy Now
Future Electronics AS4C4M16SA Series 128 Mb (8 M x 16) A-die 3.3V 166 MHz SDRAM - TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 1080 Package Multiple: 108 Container: Tray 0
Tray
  • 108 $2.4200
  • 216 $2.3700
  • 324 $2.3400
  • 432 $2.3100
$2.3100 / $2.4200 Buy Now
DISTI # AS4C8M16SA-6TCN
TME IC: DRAM memory, 128MbDRAM, 2Mx16bitx4, 3.3V, 166MHz, 5.4ns, 0÷70°C Min Qty: 1 0
  • 1 $3.5000
  • 5 $3.0600
  • 25 $2.7500
  • 108 $2.5100
  • 216 $2.0100
$2.0100 / $3.5000 RFQ
Karl Kruse GmbH & Co KG SDR 128Mb 8M x 16 3.3V 54pin TSOPII 166 Mhz Commercial Temp(.63) 31573
RFQ
DISTI # ICDRAM1726
Rutronik SDRAM 128Mb 8Mx16 166MHz TSOP RoHS: Compliant Min Qty: 108 Package Multiple: 108 Container: Tray Stock DE - 1080
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 108 $2.8600
  • 216 $2.3300
  • 324 $2.2200
  • 432 $2.2000
  • 540 $2.1600
$2.1600 / $2.8600 Buy Now
DISTI # AS4C8M16SA-6TCN
Avnet Asia DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II (Alt: AS4C8M16SA-6TCN) RoHS: Compliant Min Qty: 1080 Package Multiple: 108 Lead time: 6 Weeks, 0 Days 0
RFQ
DISTI # AS4C8M16SA-6TCN
Avnet Silica DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II (Alt: AS4C8M16SA-6TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 7 Weeks, 0 Days Silica - 0
Buy Now

Part Details for AS4C8M16SA-6TCN

AS4C8M16SA-6TCN CAD Models

AS4C8M16SA-6TCN Part Data Attributes:

AS4C8M16SA-6TCN Alliance Memory Inc
Buy Now Datasheet
Compare Parts:
AS4C8M16SA-6TCN Alliance Memory Inc Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4C8M16SA-6TCN

This table gives cross-reference parts and alternative options found for AS4C8M16SA-6TCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C8M16SA-6TCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M12L128168A-6TG2N Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TCN vs M12L128168A-6TG2N
M12L128168A-6TG2S DRAM, Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TCN vs M12L128168A-6TG2S
M12L128168A-6TG2L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TCN vs M12L128168A-6TG2L
K4S281632D-TP55 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S281632D-TP55
K4S281632D-TI55 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S281632D-TI55
K4S281632I-UL600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S281632I-UL600
K4S281632I-UC600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S281632I-UC600
K4S281632D-TI60 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S281632D-TI60
AS4C8M16S-6TCNTR Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 Alliance Memory Inc AS4C8M16SA-6TCN vs AS4C8M16S-6TCNTR
IS42SM16800E-5TL Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TCN vs IS42SM16800E-5TL
Part Number Description Manufacturer Compare
IS45S16800B-7TA Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc AS4C8M16SA-6TCN vs IS45S16800B-7TA
KM44S32030BT-FH Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs KM44S32030BT-FH
K4S280432A-TL1L0 Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S280432A-TL1L0
GM72V281641ALT-8 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, LG Semicon Co Ltd AS4C8M16SA-6TCN vs GM72V281641ALT-8
M12S128168A-7TG Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Elite Semiconductor Memory Technology Inc AS4C8M16SA-6TCN vs M12S128168A-7TG
V54C3128404VBLI8PC Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TCN vs V54C3128404VBLI8PC
K4S280432D-TI1L Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S280432D-TI1L
V54C3128164VBT6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TCN vs V54C3128164VBT6
V54C3128404VCUI8IPC Synchronous DRAM, 32MX4, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc AS4C8M16SA-6TCN vs V54C3128404VCUI8IPC
K4S280432A-TL100 Synchronous DRAM, 32MX4, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor AS4C8M16SA-6TCN vs K4S280432A-TL100

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