Part Details for BSC060P03NS3EG by Infineon Technologies AG
Overview of BSC060P03NS3EG by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC060P03NS3EG
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73928903
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RS | Transistor, MOSFET, P-channel, 17.7A, 30V, 150C, P3 power, TDSON8 | Infineon BSC060P03NS3EG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 10 |
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$0.4900 / $0.5800 | Buy Now |
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Ameya Holding Limited | Min Qty: 1250 | 4970 |
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$0.9732 / $1.0032 | Buy Now |
Part Details for BSC060P03NS3EG
BSC060P03NS3EG CAD Models
BSC060P03NS3EG Part Data Attributes:
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BSC060P03NS3EG
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC060P03NS3EG
Infineon Technologies AG
Power Field-Effect Transistor, 17.7A I(D), 30V, 0.006ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 149 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 17.7 A | |
Drain-source On Resistance-Max | 0.006 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 220 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 150 ns | |
Turn-on Time-Max (ton) | 231 ns |
Alternate Parts for BSC060P03NS3EG
This table gives cross-reference parts and alternative options found for BSC060P03NS3EG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC060P03NS3EG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC084P03NS3EG | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060P03NS3EG vs BSC084P03NS3EG |
BSC080P03LSG | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060P03NS3EG vs BSC080P03LSG |
BSC080P03LSGAUMA1 | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060P03NS3EG vs BSC080P03LSGAUMA1 |
BSC084P03NS3EGATMA1 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060P03NS3EG vs BSC084P03NS3EGATMA1 |
EMB07P03V | Power Field-Effect Transistor, 15A I(D), 30V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8 | Excelliance MOS Corporation | BSC060P03NS3EG vs EMB07P03V |
BSC084P03NS3GATMA1 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC060P03NS3EG vs BSC084P03NS3GATMA1 |