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Transistors / Power Field-Effect Transistors / BSC350N20NSFDATMA1
Datasheets
BSC350N20NSFDATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8

Part Details for BSC350N20NSFDATMA1 by Infineon Technologies AG

Overview of BSC350N20NSFDATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Automotive Motor control systems

Price & Stock for BSC350N20NSFDATMA1

Part # Distributor Description Stock Price Buy
DISTI # 24AC4562
Newark Mosfet, N-Ch, 200V, 35A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 6475
  • 1 $3.3900
  • 10 $2.8500
  • 25 $2.7700
  • 50 $2.5400
  • 100 $2.3100
  • 250 $2.2400
  • 500 $2.0500
  • 1,000 $1.6500
$1.6500 / $3.3900 Buy Now
DISTI # 86AK4480
Newark Mosfet, N-Ch, 200V, 35A, Tdson Rohs Compliant: Yes |Infineon BSC350N20NSFDATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.5800
$1.5800 Buy Now
DISTI # BSC350N20NSFDATMA1CT-ND
DigiKey MOSFET N-CH 200V 35A TDSON-8-1 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6707
In Stock
  • 1 $3.2600
  • 10 $2.7400
  • 100 $2.2169
  • 500 $1.9706
  • 1,000 $1.6873
  • 2,000 $1.5888
  • 5,000 $1.5243
$1.5243 / $3.2600 Buy Now
DISTI # BSC350N20NSFDATMA1
Avnet Americas Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.8901
$1.8901 Buy Now
DISTI # 726-BSC350N20NSFDATM
Mouser Electronics MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant 34
  • 1 $3.2600
  • 10 $2.7400
  • 25 $2.6600
  • 100 $2.2200
  • 250 $2.1500
  • 500 $1.9700
  • 1,000 $1.5900
  • 5,000 $1.5200
$1.5200 / $3.2600 Buy Now
Future Electronics Trans MOSFET N-CH 200V 35A 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 10000
Reel
  • 5,000 $1.5000
$1.5000 Buy Now
Future Electronics Trans MOSFET N-CH 200V 35A 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $1.5800
$1.5800 Buy Now
Bristol Electronics   894
RFQ
DISTI # BSC350N20NSFDATMA1
Avnet Americas Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.8901
$1.8901 Buy Now
Ameya Holding Limited   1607
RFQ
DISTI # BSC350N20NSFDATMA1
Avnet Americas Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC350N20NSFDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 5000
  • 5,000 $1.8901
$1.8901 Buy Now
DISTI # SP001108124
EBV Elektronik Transistor MOSFET N-CH 200V 35A 8-Pin TDSON T/R (Alt: SP001108124) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now
DISTI # 2770033RL
element14 Asia-Pacific MOSFET, N-CH, 200V, 35A, TDSON RoHS: Compliant Min Qty: 50 Container: Reel 8904
  • 50 $2.3321
  • 250 $2.0746
  • 1,000 $1.6700
  • 3,000 $1.5964
$1.5964 / $2.3321 Buy Now
DISTI # 2770033
element14 Asia-Pacific MOSFET, N-CH, 200V, 35A, TDSON RoHS: Compliant Min Qty: 5 Container: Cut Tape 8904
  • 5 $2.7956
  • 50 $2.3321
  • 250 $2.0746
  • 1,000 $1.6700
  • 3,000 $1.5964
$1.5964 / $2.7956 Buy Now
DISTI # 2770033RL
Farnell MOSFET, N-CH, 200V, 35A, TDSON RoHS: Compliant Min Qty: 50 Lead time: 29 Weeks, 1 Days Container: Reel 6475
  • 50 $2.3111
  • 250 $2.0474
  • 1,000 $1.6580
  • 3,000 $1.6454
$1.6454 / $2.3111 Buy Now
DISTI # 2770033
Farnell MOSFET, N-CH, 200V, 35A, TDSON RoHS: Compliant Min Qty: 5 Lead time: 29 Weeks, 1 Days Container: Cut Tape 6475
  • 5 $2.7633
  • 50 $2.3111
  • 250 $2.0474
  • 1,000 $1.6580
  • 3,000 $1.6454
$1.6454 / $2.7633 Buy Now
DISTI # 4319171
Farnell MOSFET, N-CH, 200V, 35A, TDSON RoHS: Compliant Min Qty: 5000 Lead time: 29 Weeks, 1 Days Container: Reel 0
  • 5,000 $1.5826
  • 15,000 $1.5449
$1.5449 / $1.5826 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $1.9300
  • 10,000 $1.8000
$1.8000 / $1.9300 Buy Now
Win Source Electronics MOSFET N-CH 200V 35A TDSON-8-1 87600
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

Part Details for BSC350N20NSFDATMA1

BSC350N20NSFDATMA1 CAD Models

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BSC350N20NSFDATMA1 Part Data Attributes

Parametric Data
BSC350N20NSFDATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC350N20NSFDATMA1 Infineon Technologies AG Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC350N20NSFDATMA1

This table gives cross-reference parts and alternative options found for BSC350N20NSFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC350N20NSFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSC350N20NSFDATMA1 vs IPB320N20N3GATMA1
IPD320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN Infineon Technologies AG BSC350N20NSFDATMA1 vs IPD320N20N3GATMA1
IPB320N20N3G Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSC350N20NSFDATMA1 vs IPB320N20N3G
BSC320N20NS3GATMA1 Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC350N20NSFDATMA1 vs BSC320N20NS3GATMA1
BSC320N20NS3G Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC350N20NSFDATMA1 vs BSC320N20NS3G

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