Part Details for BSO072N03S by Infineon Technologies AG
Overview of BSO072N03S by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSO072N03S
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | BSO072N03 - Small Signal Field-Effect Transistor, 12A, 30V, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2183 |
|
$0.4463 / $0.5250 | Buy Now |
Part Details for BSO072N03S
BSO072N03S CAD Models
BSO072N03S Part Data Attributes:
|
BSO072N03S
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSO072N03S
Infineon Technologies AG
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOIC | |
Package Description | GREEN, PLASTIC PACKAGE-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.0068 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 160 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSO072N03S
This table gives cross-reference parts and alternative options found for BSO072N03S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO072N03S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS6670A | Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ, 2500-REEL | onsemi | BSO072N03S vs FDS6670A |
FDS7760A | Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | BSO072N03S vs FDS7760A |
SI4858DY-T1-E3 | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | BSO072N03S vs SI4858DY-T1-E3 |
UPA1806GR-9JG-A | 13000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8 | Renesas Electronics Corporation | BSO072N03S vs UPA1806GR-9JG-A |
FDS6680A | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | BSO072N03S vs FDS6680A |
FDS6680A | Single N-Channel, Logic Level, PowerTrench® MOSFET 30V, 12.5A, 9.5mΩ, 2500-REEL | onsemi | BSO072N03S vs FDS6680A |
FDS6670AF011 | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | BSO072N03S vs FDS6670AF011 |
FDS6680A_NL | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | BSO072N03S vs FDS6680A_NL |
FDS7760AF011 | Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | BSO072N03S vs FDS7760AF011 |
RRS130N03TB | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | ROHM Semiconductor | BSO072N03S vs RRS130N03TB |