Datasheets
BSS123-F169 by: onsemi

N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL

Part Details for BSS123-F169 by onsemi

Overview of BSS123-F169 by onsemi

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Price & Stock for BSS123-F169

Part # Distributor Description Stock Price Buy
Rochester Electronics BSS123 - Small Signal Field-Effect Transistor, 0.17A, 100V, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 112662
  • 1 $0.0443
  • 25 $0.0434
  • 100 $0.0416
  • 500 $0.0399
  • 1,000 $0.0377
$0.0377 / $0.0443 Buy Now

Part Details for BSS123-F169

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BSS123-F169 Part Data Attributes

BSS123-F169 onsemi
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BSS123-F169 onsemi N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOT-23, 3 PIN
Manufacturer Package Code 318-08
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123-F169

This table gives cross-reference parts and alternative options found for BSS123-F169. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-F169, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS123LT3 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123-F169 vs BSS123LT3
Q62702-S512 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123-F169 vs Q62702-S512
BSS123TC 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Diodes Incorporated BSS123-F169 vs BSS123TC
BSS123D87Z Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123-F169 vs BSS123D87Z
BSS123/S62Z 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments BSS123-F169 vs BSS123/S62Z
BSS123E6433 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS123-F169 vs BSS123E6433
BSS123LT1 Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BSS123-F169 vs BSS123LT1
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 WEITRON INTERNATIONAL CO., LTD. BSS123-F169 vs BSS123
BSS123-L99Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123-F169 vs BSS123-L99Z
BSS123TC Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Zetex / Diodes Inc BSS123-F169 vs BSS123TC
Part Number Description Manufacturer Compare
BSS123E6327 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123-F169 vs BSS123E6327
BSS123G Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123-F169 vs BSS123G
BSS123D87Z Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123-F169 vs BSS123D87Z
BSS123LT1G Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BSS123-F169 vs BSS123LT1G
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 WEITRON INTERNATIONAL CO., LTD. BSS123-F169 vs BSS123
BSS123 Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123-F169 vs BSS123
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSS123-F169 vs BSS123
BSS123L6327HTSA1 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123-F169 vs BSS123L6327HTSA1
BSS123-13 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS123-F169 vs BSS123-13
Q67000-S245 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123-F169 vs Q67000-S245

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