Part Details for BSS123E6327 by Infineon Technologies AG
Overview of BSS123E6327 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSS123E6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 10 |
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RFQ | ||
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Bristol Electronics | 310 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 49909 |
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$0.0240 / $0.0800 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 248 |
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$0.0788 / $0.1750 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 7200 |
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$0.0400 / $0.2000 | Buy Now |
Part Details for BSS123E6327
BSS123E6327 CAD Models
BSS123E6327 Part Data Attributes
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BSS123E6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSS123E6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123E6327
This table gives cross-reference parts and alternative options found for BSS123E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS123LT3 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN | onsemi | BSS123E6327 vs BSS123LT3 |
| BSS123-F169 | N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL | onsemi | BSS123E6327 vs BSS123-F169 |
| Q62702-S512 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123E6327 vs Q62702-S512 |
| BSS123TC | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Diodes Incorporated | BSS123E6327 vs BSS123TC |
| BSS123D87Z | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | BSS123E6327 vs BSS123D87Z |
| BSS123/S62Z | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | BSS123E6327 vs BSS123/S62Z |
| BSS123E6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Siemens | BSS123E6327 vs BSS123E6433 |
| BSS123LT1 | Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | BSS123E6327 vs BSS123LT1 |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | WEITRON INTERNATIONAL CO., LTD. | BSS123E6327 vs BSS123 |
| BSS123-L99Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123E6327 vs BSS123-L99Z |