Part Details for F475R06W1E3BOMA1 by Infineon Technologies AG
Overview of F475R06W1E3BOMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for F475R06W1E3BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8781
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Newark | Igbt Mod, N-Ch, 600V, 100A/150Deg C/275W, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:1.45V, Power Dissipation:275W, Operating Temperature Max:150°C, Igbt Termination:Press Fit, Transistor Mounting:Panel Rohs Compliant: Yes |Infineon F475R06W1E3BOMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 6 |
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$44.8900 / $52.7900 | Buy Now |
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DISTI #
448-F475R06W1E3BOMA1-ND
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DigiKey | IGBT MOD 600V 100A 275W Min Qty: 1 Lead time: 26 Weeks Container: Tray |
19 In Stock |
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$30.3651 / $40.2600 | Buy Now |
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DISTI #
F475R06W1E3BOMA1
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Avnet Americas | Transistor IGBT Module N-CH 600V 100A ±20V Screw Tray - Trays (Alt: F475R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
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$34.5185 | Buy Now |
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DISTI #
13AC8781
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Avnet Americas | Transistor IGBT Module N-CH 600V 100A ±20V Screw Tray - Bulk (Alt: 13AC8781) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk | 6 Partner Stock |
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$46.0300 / $52.7900 | Buy Now |
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Rochester Electronics | F4-75R06W1E3 - LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 | 4 |
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$27.6100 / $32.4800 | Buy Now |
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DISTI #
F475R06W1E3BOMA1
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Avnet Americas | Transistor IGBT Module N-CH 600V 100A ±20V Screw Tray - Trays (Alt: F475R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
$34.5185 | Buy Now |
|
DISTI #
13AC8781
|
Avnet Americas | Transistor IGBT Module N-CH 600V 100A ±20V Screw Tray - Bulk (Alt: 13AC8781) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Bulk | 6 Partner Stock |
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$46.0300 / $52.7900 | Buy Now |
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DISTI #
F475R06W1E3
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TME | Module: IGBT, transistor/transistor, IGBT half-bridge x2, Ic: 75A Min Qty: 1 | 0 |
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$32.2200 / $40.6000 | RFQ |
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Ameya Holding Limited | Min Qty: 24 | 9 |
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$44.9777 / $46.8324 | Buy Now |
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DISTI #
F475R06W1E3BOMA1
|
Avnet Americas | Transistor IGBT Module N-CH 600V 100A ±20V Screw Tray - Trays (Alt: F475R06W1E3BOMA1) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
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$34.5185 | Buy Now |
Part Details for F475R06W1E3BOMA1
F475R06W1E3BOMA1 CAD Models
F475R06W1E3BOMA1 Part Data Attributes
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F475R06W1E3BOMA1
Infineon Technologies AG
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Datasheet
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F475R06W1E3BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-25
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-XUFM-X11 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | COMPLEX | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 4 | |
| Number of Terminals | 11 | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 45 ns |
Alternate Parts for F475R06W1E3BOMA1
This table gives cross-reference parts and alternative options found for F475R06W1E3BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of F475R06W1E3BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| F4-75R06W1E3 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-25 | Infineon Technologies AG | F475R06W1E3BOMA1 vs F4-75R06W1E3 |