Part Details for FCP190N60_GF102 by onsemi
Overview of FCP190N60_GF102 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FCP190N60_GF102
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
FCP190N60-GF102
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Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N60-GF102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Tube | 600 |
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RFQ | |
|
DISTI #
FCP190N60-GF102
|
Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N60-GF102) RoHS: Compliant Min Qty: 439 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 757 Partner Stock |
|
$1.4136 / $1.6872 | Buy Now |
|
DISTI #
FCP190N60-GF102
|
Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N60-GF102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Tube | 600 |
|
RFQ | |
|
DISTI #
FCP190N60-GF102
|
Avnet Americas | Trans MOSFET N-CH 600V 20.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP190N60-GF102) RoHS: Compliant Min Qty: 439 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 757 Partner Stock |
|
$1.4136 / $1.6872 | Buy Now |
Part Details for FCP190N60_GF102
FCP190N60_GF102 CAD Models
FCP190N60_GF102 Part Data Attributes:
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FCP190N60_GF102
onsemi
Buy Now
Datasheet
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Compare Parts:
FCP190N60_GF102
onsemi
N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ, TO-220 3L, 6400-RAIL
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Manufacturer Package Code | TO220T03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 50 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 20.2 A | |
| Drain-source On Resistance-Max | 0.199 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 60.6 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |