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Transistors / Power Field-Effect Transistors / FDP4D5N10C
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FDP4D5N10C by:

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, 800-TUBE

Part Details for FDP4D5N10C by onsemi

Overview of FDP4D5N10C by onsemi

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Price & Stock for FDP4D5N10C

Part # Distributor Description Stock Price Buy
DISTI # 65AC4707
Newark Mosfet, N-Ch, 100V, 128A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:128A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.2V Rohs Compliant: Yes |Onsemi FDP4D5N10C Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $2.9100
$2.9100 Buy Now
DISTI # FDP4D5N10C-ND
DigiKey MOSFET N-CH 100V 128A TO220-3 Min Qty: 1 Lead time: 24 Weeks Container: Tube 575
In Stock
  • 1 $5.8500
  • 50 $4.6396
  • 100 $3.9769
  • 500 $3.5350
  • 1,000 $3.0268
  • 2,000 $2.8501
$2.8501 / $5.8500 Buy Now
DISTI # FDP4D5N10C
Avnet Americas Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Tube 0
  • 800 $3.2813
  • 1,600 $3.1938
  • 3,200 $3.1063
  • 4,800 $3.0187
  • 6,400 $2.9312
$2.9312 / $3.2813 Buy Now
DISTI # 863-FDP4D5N10C
Mouser Electronics MOSFET FET 100V 128A 4.5 mOhm RoHS: Compliant 48
  • 1 $5.3900
  • 10 $4.5900
  • 50 $4.4500
  • 100 $3.7800
  • 250 $3.6700
  • 500 $3.4000
  • 800 $2.8500
  • 2,400 $2.8200
$2.8200 / $5.3900 Buy Now
DISTI # V79:2366_26238267
Arrow Electronics Trans MOSFET N-CH 100V 128A 3-Pin(3+Tab) TO-220 Tube Min Qty: 1 Package Multiple: 1 Date Code: 1843 Americas - 728
  • 1 $2.6200
$2.6200 Buy Now
DISTI # 59283373
Verical Trans MOSFET N-CH 100V 128A 3-Pin(3+Tab) TO-220 Tube Min Qty: 3 Package Multiple: 1 Date Code: 1843 Americas - 728
  • 3 $2.6200
$2.6200 Buy Now
Rochester Electronics FDP4D5N10C - N-Channel Shielded Gate PowerTrench MOSFET, 100V, 128A RoHS: Not Compliant Status: Active Min Qty: 1 3452
  • 1 $3.1900
  • 25 $3.1300
  • 100 $3.0000
  • 500 $2.8700
  • 1,000 $2.7100
$2.7100 / $3.1900 Buy Now
DISTI # FDP4D5N10C
Avnet Americas Shielded Gate PowerTrench MOSFET N-Channel 100V 128A 4.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP4D5N10C) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 0 Days Container: Tube 0
  • 800 $3.2813
  • 1,600 $3.1938
  • 3,200 $3.1063
  • 4,800 $3.0187
  • 6,400 $2.9312
$2.9312 / $3.2813 Buy Now
Ameya Holding Limited   Min Qty: 800 201
  • 800 $4.3838
  • 1,600 $4.2522
  • 8,000 $4.1247
$4.1247 / $4.3838 Buy Now
DISTI # FDP4D5N10C
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $2.7300
$2.7300 Buy Now
Chip1Cloud MOSFET N-CH 100V 128A TO220-3 2010
RFQ
DISTI # 4279898
Farnell MISCELLANEOUS MOSFETS RoHS: Not Compliant Min Qty: 800 Lead time: 3 Weeks, 1 Days Container: Each 3452
  • 800 $3.0183
$3.0183 Buy Now
DISTI # 3616142
Farnell MOSFET, N-CH, 100V, 128A, TO-220 RoHS: Compliant Min Qty: 800 Lead time: 9 Weeks, 1 Days Container: Tube 0
  • 800 $2.8555
$2.8555 Buy Now
Wuhan P&S 100V, 128A, 4.5m��, N-Channel PowerTrench MOSFET, Shielded Gate Min Qty: 1 48
  • 1 $7.6300
  • 100 $4.8700
  • 500 $4.0200
  • 1,000 $3.7000
$3.7000 / $7.6300 Buy Now

Part Details for FDP4D5N10C

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FDP4D5N10C Part Data Attributes:

Parametric Data
FDP4D5N10C onsemi
Buy Now Datasheet
Compare Parts:
FDP4D5N10C onsemi N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 128A, 4.5mΩ, 800-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 221A
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 486 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 91 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 35 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2.4 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 512 A
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 126 ns

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