Part Details for FDS4953 by Fairchild Semiconductor Corporation
Overview of FDS4953 by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDS4953
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1728 |
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RFQ | ||
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Quest Components | 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 2410 |
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$0.3188 / $0.7650 | Buy Now |
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Quest Components | 5 A, 30 V, 0.053 OHM, 2 CHANNEL, P-CHANNEL, SI, POWER, MOSFET | 1382 |
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$0.5100 / $1.2750 | Buy Now |
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ComSIT USA | DUAL 30V P-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 525 |
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RFQ | |
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DISTI #
1467982RL
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element14 Asia-Pacific | MOSFET, DUAL, P, SMD, 8-SOIC RoHS: Compliant Min Qty: 1 Container: Reel | 0 |
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$1.1555 | Buy Now |
Part Details for FDS4953
FDS4953 CAD Models
FDS4953 Part Data Attributes:
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FDS4953
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDS4953
Fairchild Semiconductor Corporation
Dual30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDS4953
This table gives cross-reference parts and alternative options found for FDS4953. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS4953, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7101PBF | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, SO-8 | Infineon Technologies AG | FDS4953 vs IRF7101PBF |
| BSO211PH | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | FDS4953 vs BSO211PH |
| NDS8934 | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.07ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS4953 vs NDS8934 |
| 934033430118 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | NXP Semiconductors | FDS4953 vs 934033430118 |
| HAT1038RJ | 3.5A, 60V, 0.23ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, FP-8DA, SOP-8 | Renesas Electronics Corporation | FDS4953 vs HAT1038RJ |
| IRF7303 | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | FDS4953 vs IRF7303 |
| PHN210 | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power | NXP Semiconductors | FDS4953 vs PHN210 |
| TPCA8020-H | TRANSISTOR 7.5 A, 40 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-5Q1A, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | FDS4953 vs TPCA8020-H |
| IRF8915PBF | Power Field-Effect Transistor, 8.9A I(D), 20V, 0.0183ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | FDS4953 vs IRF8915PBF |
| AP4405GM | TRANSISTOR 14 A, 30 V, 0.0082 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | FDS4953 vs AP4405GM |