Part Details for IPA60R120C7XKSA1 by Infineon Technologies AG
Overview of IPA60R120C7XKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPA60R120C7XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPA60R120C7XKSA1-ND
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DigiKey | MOSFET N-CH 600V 11A TO220 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
385 In Stock |
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$2.2043 / $4.5300 | Buy Now |
DISTI #
IPA60R120C7XKSA1
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPA60R120C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$2.6223 | Buy Now |
DISTI #
726-IPA60R120C7XKSA1
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Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 473 |
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$2.2000 / $4.5300 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$2.1600 / $2.3700 | Buy Now |
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Future Electronics | CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube | 0Tube |
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$2.1600 / $2.3700 | Buy Now |
DISTI #
IPA60R120C7XKSA1
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPA60R120C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$2.6223 | Buy Now |
DISTI #
IPA60R120C7XKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 7A, Idm: 66A, 32W, TO220FP Min Qty: 1 | 5 |
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$4.4500 / $6.2400 | Buy Now |
DISTI #
IPA60R120C7XKSA1
|
Avnet Americas | MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPA60R120C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$2.6223 | Buy Now |
DISTI #
SP001385040
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EBV Elektronik | MOS Power Transistors HV (>= 200V) (Alt: SP001385040) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 2 Weeks, 4 Days | EBV - 0 |
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Buy Now |
Part Details for IPA60R120C7XKSA1
IPA60R120C7XKSA1 CAD Models
IPA60R120C7XKSA1 Part Data Attributes
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IPA60R120C7XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA60R120C7XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Avalanche Energy Rating (Eas) | 78 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPA60R120C7XKSA1
This table gives cross-reference parts and alternative options found for IPA60R120C7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA60R120C7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPA60R120C7 | Power Field-Effect Transistor, 11A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | Infineon Technologies AG | IPA60R120C7XKSA1 vs IPA60R120C7 |
IPA65R125C7 | Power Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IPA60R120C7XKSA1 vs IPA65R125C7 |
IPA65R125C7XKSA1 | Power Field-Effect Transistor, 10A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IPA60R120C7XKSA1 vs IPA65R125C7XKSA1 |