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Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB011N04LGATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 180A TO263-7 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2443 In Stock |
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$2.5594 / $5.2600 | Buy Now |
DISTI #
IPB011N04LGATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB011N04LGATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.2100 / $2.7010 | Buy Now |
DISTI #
726-IPB011N04LGATMA1
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Mouser Electronics | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant | 722 |
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$2.5500 / $5.2300 | Buy Now |
DISTI #
V72:2272_06376908
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Arrow Electronics | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2325 Container: Cut Strips | Americas - 1000 |
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$2.1420 / $3.1210 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1.1 mOhm 260 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 44000Reel |
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$1.2400 | Buy Now |
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Future Electronics | Single N-Channel 40 V 1.1 mOhm 260 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$2.5000 | Buy Now |
DISTI #
79645339
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2407 | Americas - 9000 |
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$2.6356 | Buy Now |
DISTI #
69267393
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 6 Package Multiple: 1 Date Code: 2319 | Americas - 3798 |
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$3.0625 / $6.1375 | Buy Now |
DISTI #
69766697
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Verical | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 3 Package Multiple: 1 Date Code: 2325 | Americas - 1000 |
|
$2.1420 / $3.1210 | Buy Now |
DISTI #
IPB011N04LGATMA1
|
Avnet Americas | Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB011N04LGATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.2100 / $2.7010 | Buy Now |
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IPB011N04LGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB011N04LGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-263 | |
Package Description | GREEN, PLASTIC, TO-263, 7 PIN | |
Pin Count | 7 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 525 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1260 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB011N04LGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB011N04LGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB011N04LG | Power Field-Effect Transistor, 180A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB011N04LGATMA1 vs IPB011N04LG |
IPB180N04S3-02 | Power Field-Effect Transistor, 180A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, TO-263, 7 PIN | Infineon Technologies AG | IPB011N04LGATMA1 vs IPB180N04S3-02 |
IPB180N04S302ATMA1 | Power Field-Effect Transistor, 180A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB011N04LGATMA1 vs IPB180N04S302ATMA1 |
IPB180N04S302XT | Power Field-Effect Transistor, 180A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB011N04LGATMA1 vs IPB180N04S302XT |