Part Details for IPB60R180C7ATMA1 by Infineon Technologies AG
Overview of IPB60R180C7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R180C7ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC7106
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Newark | Mosfet, N-Ch, 600V, 13A, 68W, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:13A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.155Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPB60R180C7ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1565 |
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$1.5300 / $2.8700 | Buy Now |
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DISTI #
IPB60R180C7ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 13A TO263-3 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
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$1.2995 / $2.7800 | Buy Now |
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DISTI #
IPB60R180C7ATMA1
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Avnet Americas | Transistor MOSFET N-CH 600V 13A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R180C7ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.6114 | Buy Now |
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DISTI #
726-IPB60R180C7ATMA1
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Mouser Electronics | MOSFET HIGH POWER_NEW RoHS: Compliant | 3841 |
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$1.2900 / $2.6900 | Buy Now |
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DISTI #
73928862
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RS | Transistor, MOSFET, 600V CoolMOS, C7 power, 650V, 180mOhm, 45A, TO263 | Infineon IPB60R180C7ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 5 |
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$2.0200 / $2.6900 | Buy Now |
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Future Electronics | IPB60R180C7 Series 600 V 13 A 180 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.3300 / $1.3700 | Buy Now |
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Future Electronics | IPB60R180C7 Series 600 V 13 A 180 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.3300 / $1.3700 | Buy Now |
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DISTI #
IPB60R180C7ATMA1
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Avnet Americas | Transistor MOSFET N-CH 600V 13A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R180C7ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.6114 | Buy Now |
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DISTI #
IPB60R180C7
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TME | Transistor: N-MOSFET, unipolar, 600V, 8A, 68W, D2PAK Min Qty: 1 | 0 |
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$1.8300 / $2.5600 | RFQ |
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Ameya Holding Limited | Min Qty: 5 | 785 |
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$1.8607 / $1.9780 | Buy Now |
Part Details for IPB60R180C7ATMA1
IPB60R180C7ATMA1 CAD Models
IPB60R180C7ATMA1 Part Data Attributes:
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IPB60R180C7ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R180C7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-263, D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 53 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 45 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R180C7ATMA1
This table gives cross-reference parts and alternative options found for IPB60R180C7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R180C7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP60R170CFD7XKSA1 | Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPB60R180C7ATMA1 vs IPP60R170CFD7XKSA1 |
| IPD60R170CFD7ATMA1 | Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Infineon Technologies AG | IPB60R180C7ATMA1 vs IPD60R170CFD7ATMA1 |
| IPW60R180C7 | Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | IPB60R180C7ATMA1 vs IPW60R180C7 |
| IPP60R180C7 | Power Field-Effect Transistor, 13A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPB60R180C7ATMA1 vs IPP60R180C7 |