Part Details for IPB65R150CFDATMA1 by Infineon Technologies AG
Overview of IPB65R150CFDATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB65R150CFDATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9033
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Newark | Mosfet, N-Ch, 650V, 22.4A, To-263-3, Transistor Polarity:N Channel, Continuous Drain Current Id:22.4A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.135Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPB65R150CFDATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.8500 | Buy Now |
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DISTI #
V72:2272_06378612
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Arrow Electronics | Trans MOSFET N-CH 650V 22.4A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2324 Container: Cut Strips | Americas - 400 |
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$4.2200 / $4.4360 | Buy Now |
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DISTI #
IPB65R150CFDATMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 22.4A, 195.3W, PG-TO263-3 Min Qty: 1 | 0 |
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$2.2900 / $3.8100 | RFQ |
Part Details for IPB65R150CFDATMA1
IPB65R150CFDATMA1 CAD Models
IPB65R150CFDATMA1 Part Data Attributes:
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IPB65R150CFDATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB65R150CFDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, D2PAK-3/2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 614 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 22.4 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB65R150CFDATMA1
This table gives cross-reference parts and alternative options found for IPB65R150CFDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R150CFDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R150CFDATMA2 | Power Field-Effect Transistor, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R150CFDATMA1 vs IPB65R150CFDATMA2 |
| IPB65R150CFDAATMA1 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R150CFDATMA1 vs IPB65R150CFDAATMA1 |
| IPB65R150CFD | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R150CFDATMA1 vs IPB65R150CFD |
| IPB65R150CFDA | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R150CFDATMA1 vs IPB65R150CFDA |