Datasheets
IRF3205ZPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF3205ZPBF by International Rectifier

Overview of IRF3205ZPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF3205ZPBF

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 55V, 0.0065OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 4000
  • 1 $3.3519
  • 485 $1.8435
  • 1,086 $1.6760
$1.6760 / $3.3519 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 4305
RFQ

Part Details for IRF3205ZPBF

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IRF3205ZPBF Part Data Attributes:

IRF3205ZPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF3205ZPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 440 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3205ZPBF

This table gives cross-reference parts and alternative options found for IRF3205ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3205ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF3205ZPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205ZPBF vs IRF3205ZPBF
AUIRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier IRF3205ZPBF vs AUIRF3205Z
AUIRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205ZPBF vs AUIRF3205Z
IRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205ZPBF vs IRF3205Z
Part Number Description Manufacturer Compare
IRF3205PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205ZPBF vs IRF3205PBF
HUF75344P3 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRF3205ZPBF vs HUF75344P3
IRF3205HR Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF3205ZPBF vs IRF3205HR
HUF75339P3 N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ, 800-TUBE onsemi IRF3205ZPBF vs HUF75339P3
AUIRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 International Rectifier IRF3205ZPBF vs AUIRF3205Z
AUIRF3205Z Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF3205ZPBF vs AUIRF3205Z
IRF3205VPBF Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF3205ZPBF vs IRF3205VPBF
HUF75345P3 N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ, 800-TUBE onsemi IRF3205ZPBF vs HUF75345P3
FS22SM-10 22A, 500V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN Renesas Electronics Corporation IRF3205ZPBF vs FS22SM-10
HUF75344P3_NL Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation IRF3205ZPBF vs HUF75344P3_NL

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