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Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
42Y0407
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Newark | Dual Mosfet, Dual P Channel, -4.9 A, -30 V, 0.042 Ohm, -10 V, -1 V Rohs Compliant: Yes |Infineon IRF7316TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 15555 |
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$0.5360 / $0.9460 | Buy Now |
DISTI #
86AK5373
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Newark | Mosfet, P-Ch, 30V, 4.9A, Soic Rohs Compliant: Yes |Infineon IRF7316TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.3910 / $0.4200 | Buy Now |
DISTI #
IRF7316PBFCT-ND
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DigiKey | MOSFET 2P-CH 30V 4.9A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
38114 In Stock |
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$0.3765 / $1.0000 | Buy Now |
DISTI #
IRF7316TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7316TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3507 / $0.4008 | Buy Now |
DISTI #
IRF7316TRPBF
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Avnet Americas | Transistor MOSFET Array Dual P-CH 30V 4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7316TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3507 / $0.4259 | Buy Now |
DISTI #
942-IRF7316TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL PCh -30V 4.9A RoHS: Compliant | 4350 |
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$0.3760 / $0.8900 | Buy Now |
DISTI #
70017440
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RS | MOSFET, Power, Dual P-Ch, VDSS -30V, RDS(ON) 0.042Ohm, ID -4.9A, SO-8,PD 2W, VGS+/-20V | Infineon IRF7316TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.8300 / $1.0400 | RFQ |
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Future Electronics | Dual P-Channel 30 V 0.098 Ohm 34 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 28000Reel |
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$0.3700 / $0.3850 | Buy Now |
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Future Electronics | Dual P-Channel 30 V 0.098 Ohm 34 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.2250 / $0.2300 | Buy Now |
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Bristol Electronics | 1159 |
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RFQ |
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IRF7316TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7316TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4.9 A | |
Drain-source On Resistance-Max | 0.058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF7316TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7316TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7316TRPBF vs IRF7316 |
TSM4953DCSRL | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316TRPBF vs TSM4953DCSRL |
TSM4953DCSRFG | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316TRPBF vs TSM4953DCSRFG |
IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316TRPBF vs IRF7316 |
TSM4953DCSRF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Taiwan Semiconductor | IRF7316TRPBF vs TSM4953DCSRF |
AUIRF7316QTR | Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7316TRPBF vs AUIRF7316QTR |
IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7316TRPBF vs IRF7316PBF |
IRF7316TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316TRPBF vs IRF7316TRPBF |
UTM4953-S08-R | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | IRF7316TRPBF vs UTM4953-S08-R |
TSM4953DCSRLG | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316TRPBF vs TSM4953DCSRLG |