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Part Details for IRF7317TRPBF by Infineon Technologies AG
Overview of IRF7317TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF7317TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7317PBFCT-ND
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DigiKey | MOSFET N/P-CH 20V 6.6A/5.3A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Limited Supply - Call |
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$0.4093 / $0.4505 | Buy Now |
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DISTI #
IRF7317TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7317TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3812 / $0.4357 | Buy Now |
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DISTI #
942-IRF7317TRPBF
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Mouser Electronics | MOSFET MOSFT DUAL N/PCh 20V 6.6A RoHS: Compliant | 4613 |
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$0.4090 / $1.0400 | Buy Now |
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DISTI #
70018884
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RS | IRF7317TRPBF Dual N/P-channel MOSFET Transistor, 5.3 A, 6.6 A, 20 V, 8-Pin SOIC | Infineon IRF7317TRPBF RoHS: Not Compliant Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$1.0600 / $1.3400 | RFQ |
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Future Electronics | Dual N/P-Channel 20V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 4000Reel |
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$0.2450 / $0.2550 | Buy Now |
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Future Electronics | Dual N/P-Channel 20V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
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$0.4000 / $0.4150 | Buy Now |
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Rochester Electronics | IRF7317TRPBF - PLANAR <=40V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 44000 |
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$0.4051 / $0.4766 | Buy Now |
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DISTI #
IRF7317TRPBF
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Avnet Americas | Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7317TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.3812 / $0.4357 | Buy Now |
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Ameya Holding Limited | Dual N/P-Channel 20V 0.029/0.058 Ohm 18/19 nC HEXFET® Power Mosfet - SOIC-8 | 4000 |
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RFQ | |
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DISTI #
IRF7317TRPBF
|
Avnet Americas | Trans MOSFET N/P-CH 20V 6.6A/5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7317TRPBF) RoHS: Not Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.3812 / $0.4357 | Buy Now |
Part Details for IRF7317TRPBF
IRF7317TRPBF CAD Models
IRF7317TRPBF Part Data Attributes
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IRF7317TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7317TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain-source On Resistance-Max | 0.029 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 26 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7317TRPBF
This table gives cross-reference parts and alternative options found for IRF7317TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7317TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7317 | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7317TRPBF vs IRF7317 |
| IRF7317TRPBF | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | International Rectifier | IRF7317TRPBF vs IRF7317TRPBF |
| IRF7317PBF | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7317TRPBF vs IRF7317PBF |
| IRF7317TR | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | IRF7317TRPBF vs IRF7317TR |
| IRF7317 | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7317TRPBF vs IRF7317 |